2011
DOI: 10.1109/tcsii.2011.2172528
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A Dual-Mode Power Amplifier With On-Chip Switch Bias Control Circuits for LTE Handsets

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Cited by 23 publications
(4 citation statements)
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“…A novel switching method is also reported which utilizes the base-collector diode to improve the switching efficiency [29]. Recent work also employs the switching technique integrating PHEMT process on a GaAs HBT power cell [30]. Alternatively a dual output matching network is proposed instead of switching between two power cells.…”
Section: Device Switchingmentioning
confidence: 99%
“…A novel switching method is also reported which utilizes the base-collector diode to improve the switching efficiency [29]. Recent work also employs the switching technique integrating PHEMT process on a GaAs HBT power cell [30]. Alternatively a dual output matching network is proposed instead of switching between two power cells.…”
Section: Device Switchingmentioning
confidence: 99%
“…To model the circuit consumed power of the RF module, we consider a power amplifier array [3,31] which is based on four power amplifiers: a low-power amplifier (LPA) and three high-power amplifiers, HPA 1, HPA 2, and HPA 3, as presented in Figure 4. The power amplifier efficiency is assumed equal for both high-power amplifiers; however, HPA 1 and 2 are designed to transmit up to one fourth and to one half of the maximum transmitted power of HPA 3, respectively.…”
Section: Physical Components Power Consumption Model and Performance mentioning
confidence: 99%
“…A low-and high-power dual mode PA for LTE, with on-chip switch bias control was reported in [10]. It uses a switching technique to improve the efficiency at low output power.…”
Section: Introductionmentioning
confidence: 99%