A eutectic hydroxide etch for β-SiC

Nordquist, P. E. R.; Lessoff, H.; Gorman, R. J.; Gipe, M. L.

doi:10.1016/0167-577x(89)90015-3

Cited by 6 publications

(2 citation statements)

References 5 publications

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“…The etch rate exhibits poor stability [18] and it is difficult to get good reproducibility for small etch pits (less than 10 mm). The application of KOH-NaOH eutectic to SiC etching was first reported by Nordquist et al [19] for revealing defects in beta-SiC at 350 1C. Recently, Weyher et al [20] reported defect selective etching of 4H-SiC epilayer by using KOH-NaOH eutectic for well-controlled and local etching.…”

Section: Introductionmentioning

confidence: 97%

Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers

Song

Rana

Sudarshan

2011

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 97%

Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers

Song

Rana

Sudarshan

2011

Journal of Crystal Growth

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“…The substrate of sample 7 was mapped for etch pits with a Normaski optical microscope (NOM) to investigate defect evolution during the epitaxial growth. After epitaxial growth, all of the above epilayers were etched by conventional molten KOH (∼2 min at 550 °C) or regular KOH–NaOH eutectic (5–15 min at 500 °C) to delineate the defects on the epilayer. For sample 8, the substrate underwent a 2-min treatment at the above stated optimized eutectic conditions.…”

mentioning

confidence: 99%

Basal Plane Dislocation Mitigation in SiC Epitaxial Growth by Nondestructive Substrate Treatment

Song

Sudarshan

2012

Crystal Growth & Design

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An optimized molten KOH−NaOH−MgO eutectic mixture is used to pretreat the 8°off-axis 4H-SiC substrate prior to chemical vapor deposition epitaxial growth. Superior to the conventional pure KOH etching method, by way of the eutectic method, the conversion of basal plane dislocation (BPD) to threading edge dislocation in the subsequent epitaxial growth is independent of the etch pit size pregenerated on the substrate. Even with a very mild treatment using the eutectic mixture, which does not generate discriminable etch pits on the substrate, an epilayer with low BPD density <22 cm −2 (<0.1% of BPDs on the substrate) is still achieved, and further, there is no degradation of morphology on the entire sample surface. All of the BPD conversions occur at the initial stage of epitaxial growth.

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