A fabrication and characterictics of microbolometer detectors using VOx/ZnO/VOx multilayer thin film processing

Han, Myung-Soo; Kim, Dae Hyeon; Ko, Hang-Ju; Shin, Jae Chul; Kim, Hyo Jin; Kim, Do Gun

doi:10.1117/12.2049513

Cited by 3 publications

(4 citation statements)

References 8 publications

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“…Traditionally, VO x is a commercial NTCR material, while the practical use of VO 2 as an NTCR material is often subject to the resistance hysteresis between heating and cooling. Compared with these materials, − our devices with VS x O y exhibit comparable NTCR with small hysteresis but higher resistivity, which may find applications in low-power-consumption temperature monitoring and microbolometers (Figure f).…”

Section: Resultsmentioning

confidence: 96%

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Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix

et al. 2021

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Vanadium dioxide (VO2) is a strongly correlated electronic material and has attracted significant attention due to its metal-to-insulator transition and diverse smart applications. Traditional synthesis of VO2 usually requires minutes or hours of global heating and low oxygen partial pressure to achieve thermodynamic control of the valence state. Further patterning of VO2 through a series of lithography and etching processes may inevitably change its surface valence, which poses a great challenge for the assembly of micro- and nanoscale VO2-based heterojunction devices. Herein, we report an ultrafast method to simultaneously synthesize and pattern VO2 on the time scale of seconds under ambient conditions through laser direct writing on a V5S8 “canvas”. The successful ambient synthesis of VO2 is attributed to the ultrafast local heating and cooling process, resulting in controlled freezing of the intermediate oxidation phase during the relatively long kinetic reaction. A Mott memristor based on a V5S8–VO2–V5S8 lateral heterostructure can be fabricated and integrated with a MoS2 channel, delivering a transistor with abrupt switching transfer characteristics. The other device with a VS x O y channel exhibits a large negative temperature coefficient of approximately 4.5%/K, which is highly desirable for microbolometers. The proposed approach enables fast and efficient integration of VO2-based heterojunction devices and is applicable to other intriguing intermediate phases of oxides.

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Section: Resultsmentioning

confidence: 96%

“…Scale bar, 3 μm. (f) Comparison of NTCR and resistivity of the devices fabricated at various laser scanning rates with traditional VO x and VO 2 thin film. − …”

Section: Resultsmentioning

confidence: 99%

Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix

et al. 2021

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“…At the present time, vanadium oxide (VO x ) (~2%/K) [10][11][12][13][14][15][16] and doped amorphous silicon (a-Si) with TCR values of 2%-5%/K [17][18][19][20][21][22] are the two main materials used as thermosensing films in commercial microbolometers. However, amorphous silicon, usually doped with boron, is replacing vanadium oxide in large commercial arrays.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Microbolometer Arrays Based on Polymorphous Silicon–Germanium

Jiménez

Moreno

Torres

et al. 2020

Sensors

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This work reports the development of arrays of infrared sensors (microbolometers) using a hydrogenated polymorphous silicon–germanium alloy (pm-SixGe1-x:H). Basically, polymorphous semiconductors consist of an amorphous semiconductor matrix with embedded nanocrystals of about 2–3 nm. The pm-SixGe1-x:H alloy studied has a high temperature coefficient of resistance (TCR) of 4.08%/K and conductivity of 1.5 × 10−5 S∙cm−1. Deposition of thermosensing film was made by plasma-enhanced chemical vapor deposition (PECVD) at 200 °C, while the area of the devices is 50 × 50 μm2 with a fill factor of 81%. Finally, an array of 19 × 20 microbolometers was packaged for electrical characterization. Voltage responsivity values were obtained in the range of 4 × 104 V/W and detectivity around 2 × 107 cm∙Hz1/2/W with a polarization current of 70 μA at a chopper frequency of 30 Hz. A minimum value of 2 × 10−10 W/Hz1/2 noise equivalent power was obtained at room temperature. In addition, it was found that all the tested devices responded to incident infrared radiation, proving that the structure and mechanical stability are excellent.

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“…ZnO thin films were grown with radio frequency (RF) sputtering, which have the direct wide bandgap of ∼3.36 eV and have high binding excitation energy of 60 meV [19][20][21][22]. A vanadium oxides microbolometer was fabricated using multilayer thin film processing [23].…”

Section: Introductionmentioning

confidence: 99%

Vanadium Oxide Microbolometer Using ZnO Sandwich Layer

Han¹,

Kim²,

Ko³

et al. 2015

Applied Science and Convergence Technology

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Optical, electrical and structural properties of VOx/ZnO/VOx thin film are studied. The VOx/ZnO/VOx multilayer is deposited by using a radio frequency (RF) sputtering system.The VOx/ZnO/VOx thin film shows the high temperature coefficient of resistance (TCR) of −3.12%/ o C and the low sheet resistance of about 80 kΩ/sq at room temperature. The responsivity and detectivity of the bolometer are measured as a function of modulation frequency.

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A fabrication and characterictics of microbolometer detectors using VOx/ZnO/VOx multilayer thin film processing

Cited by 3 publications

References 8 publications

Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix

Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix

Fabrication of Microbolometer Arrays Based on Polymorphous Silicon–Germanium

Vanadium Oxide Microbolometer Using ZnO Sandwich Layer

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