A Ferroelectric and Charge Hybrid Nonvolatile Memory—Part I: Device Concept and Modeling

Rajwade, Shantanu; Auluck, Kshitij; Phelps, Joshua B.; Lyon, Keith G.; Shaw, Jonathan; Kan, Edwin C.

doi:10.1109/ted.2011.2175396

Cited by 10 publications

(1 citation statement)

References 34 publications

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“…Furthermore, though it is only a hypothesis and not proved here, 5 nm thick Al 2 O 3 layer is so thin that charges may tunnel from p-Si through Al 2 O 3 layer to P(VDF-TrFE)/Al 2 O 3 interface to partly compensate polarization charges. S. Rajwade et al have proposed and experimentally realized ferroelectric and charge hybrid nonvolatile memory devices in order to improve retention property of both logic states, 21,22 where charges can tunnel through 5.4 nm thick SiO 2 layer and then trap in 2.5 nm thick HfO 2 layer. If charge tunneling happens in P(VDF-TrFE)/Al 2 O 3 /p-Si capacitors, retention property is expected to be further improved.…”

Section: -8mentioning

confidence: 99%

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Zhang

Weng

et al. 2015

AIP Advances

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Ferroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degradation in ferroelectric memories are complicated and still an open question, depolarization in ferroelectric polymer layer was regarded as the main influencing factor. Here we reported our piezoresponse force microscopy (PFM) study of retention property of polarization states on various ferroelectric polymer based structures. PFM results indicated that, as for ferroelectric/semiconductor structure and ferroelectric/insulator/semiconductor structure with thin insulating layer, both positive and negative polarization states could retain for a relatively long time. Mechanisms of good retention of polarization states were discussed. The discrepancy in bad retention of logic states and good polarization retention of ferroelectric layer was also analyzed.

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Section: -8mentioning

confidence: 99%

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Zhang

Weng

et al. 2015

AIP Advances

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Applications of Nanotechnology in Next-Generation Nonvolatile Memories

Sengupta

Sharma

Sarkar

2015

Introduction to Nano

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A hybrid ferroelectric-flash memory cells

Park

Byun

Seok

et al. 2014

Journal of Applied Physics

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A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V−1 s−1 of field-effect mobility, 190 mV dec−1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to −5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

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A Ferroelectric and Charge Hybrid Nonvolatile Memory—Part I: Device Concept and Modeling

Cited by 10 publications

References 34 publications

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Applications of Nanotechnology in Next-Generation Nonvolatile Memories

A hybrid ferroelectric-flash memory cells

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