A ferroelectric field effect transistor based on a Pb(ZrxTi1−x )O3/SnO2 heterostructure

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

“…There has been an increased interest in ferroelectric field effect transistors ͑FFET͒ for memory cell applications lately because of their potential advantages over conventional FETs such as nonvolatile memory functionality, even after a power failure, and nondestructive readout properties The general idea of FFET transistors in which ferroelectric material is used as a gate insulator ͓liberally used terminology to describe where the lead zirconate titanate ͑PZT͒ layer is situ-ated͔ is not a new one as such a transistor was proposed a half century ago by several independent investigators, Looney et al 1 Since then a number of reports have appeared in the literature. [2][3][4][5][6][7][8][9][10] This letter, however, uniquely utilizes a GaN platform with such desirable properties as high temperature operation and radiation hardness.…”

Ferroelectric field-effect transistor based on transparent oxides

“…The highest obtained modulation of the channel conductance, demonstrated previously in [5,11] was 94%, as the gate voltage was varied from − 5 V to 2 V. The difference in the channel current at positive and negative remnant polarizations of the undergate ferroelectric was 37%. The hysteresis loop of the dependence of the drain current (I d ) on the gate voltage (V g ) showed a clockwise direction.…”

“…XRD spectrum demonstrates reflections similar to those for polycrystalline films. The more detailed technology description you can find in our previous papers [5,11]. For all electric measurements we used KEITHLEY Picoammeter-6487; SourceMeter-2400 and PCI card (National Instruments-6014).…”

“…Unfortunately, non-epitaxial growing of PZT film can result in a trapping-dominated memory (clockwise hysteresis) and a finite retention time in FFET-type memories [9][10][11]. To improve the quality of PZT films, well-matched SrTiO 3 substrates were used in [4], but in this case the channel should be grown on the polycrystalline PZT and could not have high electron mobility.…”

“…Recently, we have shown [5,11] that SnO 2 (100)/c-Al 2 O 3 is a good candidate for production of a high-mobility transparent channel in the FFET structure. In this work we investigate reasons of the clockwise hysteresis loop and small retention time of remnant polarization in the PZT/SnO 2 /Al 2 O 3 FFET structures.…”