Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

Kang, Youn-Seon; Fan, Qian; Xiao, Bo; Alivov, Ya. I.; Xie, Jinqiao; Onojima, Norio; Cho, Sang-Jun; Youngjoo, Moon; Lee, Hosun; Johnstone, D.; Morkoç̌, H.; Park, Young-Soo

doi:10.1063/1.2187956

Cited by 42 publications

(12 citation statements)

References 24 publications

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“…Several months after our own publication, , showing the modification of the sheet resistance in the 2DEG by a factor of three due to the poling the PZT layer, Kang et al [2006] published similar results while using a Si 3 N 4 buffer layer. A ferroelectric field effect transistor was then designed and structured with width 7 µm and length 95 µm.…”

Section: Pzt Gate With Si 3 N 4 Buffer Layersupporting

confidence: 55%

“…With this structured device they were able to measure a modulation in the drain source current I DS with V GS by at least a factor four. Figure 2.16b shows a Kang et al [2006] typical transistor curve with I DS varying with V DS and modulated by V GS . When increasing V DS above 8 V, I DS had problems of gate leakage for V GS ≥−8 V. The depletion effect observed could be more substantial if the gate leakage problems are reduced with a higher crystalline quality PZT layer that was deposited here.…”

Section: Pzt Gate With Si 3 N 4 Buffer Layermentioning

confidence: 99%

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Ferroelectric Gate on AlGaN/GaN Heterostructures

Malin¹,

Stolichnov²,

Muralt³

et al. 2006

2006 IEEE International Symposium on the Applications of Ferroelectrics

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The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric random access memory, FeRAM, which allows for high speed, low voltage and greater write-erase endurance compared to its two main competitors, Flash and EEPROM, when using the one transistorone capacitor configuration. However, it is desired to further optimise the configuration in order to obtain better densification, faster access time and better reliability. One way to do such is to pass from the ferroelectric capacitors and develop ferroelectric field effect transistors.Exploiting the phenomenon of ferroelectricity and integrating ferroelectrics with the semiconductor technology has not been simple. The FeFET has been demonstrated using a silicon-based transistor, however commercial devices are not available. Challenges arise mainly due to the high temperature deposition of perovskite ferroelectrics causing the degradation of the ferroelectric/semiconductor interface due to inter-diffusion. Acquiring long term retention of the transistor behavior has also been problematic due to phenomenons such as charge injection and depolarisation.In this thesis a new approach to the problem of semiconductor devices with a ferroelectric gate is explored. Instead of using a silicon-based device, semiconductor heterostructures are investigated. Combining the high mobility channel existing in semiconductor heterostructures, with the non-volatile switching of the polarisation in the ferroelectric gate can pave the way to novel future devices.The AlGaN/GaN semiconductor heterostructure was chosen for two main reasons. The first is a two dimensional electron gas, 2DEG, located at the AlGaN/GaN interface which possesses better transport properties than a single layered semiconductor. Secondly, GaN and its alloys are known to have large chemical and temperature stability making them ideal to withstand the high temperature deposition process of perovskite ferroelectrics.The deposition of two ferroelectric layers onto the AlGaN heterostructure were investigated. Lead zirconium titanate, PZT, a traditional perovskite ferroelectric deposited at high temperature, was chosen for its high remanent polarisation and low coercive field. An alternative ferroelectric gate, the co-polymer poly(vinylidene fluoride/trifluoroethylene), P(VDF/TrFE)(70:30) was deposited and of interest due its low crystallisation temperature and low dielectric constant. Its remanent polarisation is smaller and coercive field larger than that of PZT, but were determined sufficient to observe the depletion effect in the two dimensional electron gas.The goals accomplished in this research were:Development of Ferroelectric Gate Processing: Deposition processes of the ferroelectric layers were developed and optimised in order to obtain a high quality ferroelectric, while maintaining the original transport properties...

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Section: Pzt Gate With Si 3 N 4 Buffer Layersupporting

confidence: 55%

Section: Pzt Gate With Si 3 N 4 Buffer Layermentioning

confidence: 99%

Ferroelectric Gate on AlGaN/GaN Heterostructures

Malin¹,

Stolichnov²,

Muralt³

et al. 2006

2006 IEEE International Symposium on the Applications of Ferroelectrics

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show abstract

“…Integrating these oxides with wide bandgap polar semiconductors like GaN is of particular interest given the potential for both passive and active coupling between the fixed permanent semiconductor dipole and the reorientable ferroelectric dipole. In principle, ferroelectric-GaN interfaces are populated by large charge densities that must compensate the polarization discontinuity [2][3][4][5]. These charges are expected to form a 2-D electron or hole gas whose properties are determined by the polarization values and the interface separating the adjacent layers [6].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

Losego¹,

Kourkoutis²,

Mita³

et al. 2009

Journal of Crystal Growth

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“…Owing to its excellent physical properties such as high remnant polarization, large pyroelectric coefficient, and large dielectric constant [1], PbTiO 3 (PTO) thin films have promising applications in ferroelectric random access memories [2,3], ferroelectric field-effect transistors [4], gate material for ionsensitive field-effect transistors [5,6], and pyroelectric infrared sensors [7]. Due to the anisotropic nature of PTO, its physical properties are mainly determined by its crystallographic orientation and crystalline quality.…”

Section: Introductionmentioning

confidence: 99%