Growth and structure of MBE-grown PbTiO3 epilayers by using RF atomic oxygen source

Zhang, C.J.; Chen, Y.F.; Wang, Z.G.; Tian, Bin; Chen, Cheng; Deng, Xiaojun; Liu, M.; Zhang, Y.; Liu, X.Z.; Li, Y.R.

doi:10.1016/j.jcrysgro.2009.11.019

Cited by 4 publications

(3 citation statements)

References 16 publications

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“…In these studies, the morphology and the electrochemical properties of MnO 2 clearly improved with the doping of a metallic element into it. Our group synthesized MnO 2 powder in a high magnetic field [12,13] and found that the magnetic loss property of MnO 2 was enhanced, but this improvement remains insufficient. Therefore, doping a metallic element into MnO 2 and introducing an external field can be viewed as the important components of synthetic processes for materials with unique morphologies and properties.…”

Section: Introductionmentioning

confidence: 99%

Morphology-controlled synthesis and novel microwave electromagnetic properties of hollow urchin-like chain Fe-doped MnO2 under 10T high magnetic field

Duan

Jia

Jing

et al. 2011

Journal of Solid State Chemistry

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Section: Introductionmentioning

confidence: 99%

Morphology-controlled synthesis and novel microwave electromagnetic properties of hollow urchin-like chain Fe-doped MnO2 under 10T high magnetic field

Duan

Jia

Jing

et al. 2011

Journal of Solid State Chemistry

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“…Especially, P(VDF-TrFE) can be deposited at a room temperature using a cost-effective spin coating method, as compared to other ferroelectric materials, which require a sophisticated vacuum system with a high temperature process, such as molecular beam epitaxy (MBE), liquid delivery metal organic chemical vapor deposition (LDMOCVD) etc. The advantage of depositing the P(VDF-TrFE) film at room temperature by spin-coating is to avoid the interfacial diffusion and chemical reaction between P(VDF-TrFE) and the underlying AlGaN layer, which normally happens in a high temperature deposition process282930. These make P(VDF-TrFE) as an attractive material which can be integrated into the AlGaN/GaN HEMTs for performance enhancement.…”

mentioning

confidence: 99%

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Liu

Wang

et al. 2015

Sci Rep

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Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement.

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“…Compared to GaN and Al 0.3 Ga 0.7 N with a small spontaneous polarization of 2.9, and 4.5 μC cm −2 [5], oxide ferroelectric film has much larger remnant polarization. For example Pb(Zr x Ti 1−x )O 3 (PZT) film has a remnant polarization 2P r of ∼100 μC cm −2 [6]. The large remnant polarization can be utilized to modulate the transport properties of AlGaN/GaN 2DEG.…”

Section: Introductionmentioning

confidence: 99%

Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)

Wang¹,

Chen²,

Chen³

et al. 2010

Semicond. Sci. Technol.

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A nearly square-like ferroelectric hysteretic loop of spin-coated and crystallized poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) with a remnant polarization 2 Pr of 20 μC cm −2 was obtained. The electrical transport properties of the P(VDF-TrFE)/AlGaN/GaN structure were investigated. The results show that the carrier density N s , mobility μ, and resistivity ρ of AlGaN/GaN 2DEG can be directly and strongly modulated by an external electric field via the ferroelectric polymer P(VDF-TrFE): the N s , μ, and ρ of AlGaN/GaN 2DEG exhibit closed hysteretic loops under a closed external electric field and the carrier density can be tuned as large as 235% only by changing the external electric field.

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Growth and structure of MBE-grown PbTiO3 epilayers by using RF atomic oxygen source

Cited by 4 publications

References 16 publications

Morphology-controlled synthesis and novel microwave electromagnetic properties of hollow urchin-like chain Fe-doped MnO2 under 10T high magnetic field

Morphology-controlled synthesis and novel microwave electromagnetic properties of hollow urchin-like chain Fe-doped MnO2 under 10T high magnetic field

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)

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