A Finite Element Analysis on the Reliability of Heavy Bonding Wire for High-Power IGBT Module

Huang, Qiang; Peng, Cheng; Ellen, Serwaa Frimpong-Manso; Zhu, Wenhui; Wang, Liancheng

doi:10.1109/tcpmt.2020.3028386

Cited by 21 publications

(8 citation statements)

References 17 publications

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“…5, for the investigated device the collector is at the bottom of the IGBT die while the emitter is at the top. The physical properties of the module constitutive materials can vary substantially between manufacturers [9,10]. For simplicity, the material physical properties were selected from a range of values available in the open literature.…”

Section: Module Characterizationmentioning

confidence: 99%

“…Direct measuring of electro-mechanical-thermal effects on the IGBT is extremely difficult, and such analysis are often conducted with the help of numerical models. For its capability to simulate the complex interactions between the different IGBT components and materials, the use of finite element (FE) models is commonly used in the detailed analysis of IGBTs thermal behaviour [9,10].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

IGBT finite element model for fibre bragg grating sensor installation analysis

Vilchis-Rodriguez¹,

Chen²,

Djurović³

et al. 2022

IET Conf. Proc.

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An IGBT finite element model aimed at facilitating the assessment of Fibre Bragg Grating sensing based direct on-chip temperature monitoring is first presented in this paper. A commercial off-the-shelf IGBT module geometry is characterised, and a thermo-electrical finite element model is then established using its features. The model is subsequently employed to evaluate the local thermal disturbances that may be introduced by the installation of the optical based temperature sensor directly on the top surface of the IGBT chip. The effects of the sensor thermal interface material characteristics, e.g., thermal conductivity and size, in the local temperature environment are investigated.

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Section: Module Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

IGBT finite element model for fibre bragg grating sensor installation analysis

Vilchis-Rodriguez¹,

Chen²,

Djurović³

et al. 2022

IET Conf. Proc.

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show abstract

“…Conventional device interconnection involves ultrasonic wire-bonding, which should not be made with sharp turns such as semicircle to achieve manageable stress in the wire bond neck and heel [23]. The long, non-coupled path of the wire bonds result in an additional unwanted inductance [24].…”

Section: Introductionmentioning

confidence: 99%

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

Janabi,

Shillaber,

Ying

et al. 2024

IEEE Trans. Power Electron.

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This paper proposes a new power electronic packaging for discrete dies, namely Standard Cell which consists of a step-etched active metal brazed (AMB) substrate and a flexible printed circuit board (flex-PCB). The standard cell exhibits high thermal conductivity, complete electrical insulation, and low stray inductance, thereby enhancing the performance of SiC MOSFET devices. The standard cell has a stray power loop inductance of less than 1 nH and a gate loop inductance of less than 1.5 nH.The standard cell has a flat body with surface-mounting electrical connections on one side and direct thermal connections on the other. The use of flex-PCB die interconnection enables maximum utilization of source pads while providing a flexible gate-source connection and the converter PCB. This paper presents the design concept of the standard cell and experimentally validates its effectiveness in a converter system.

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“…Condition monitoring is thought to be an effective method for enabling in-situ diagnosis and prognosis for improved field reliability of IGBT modules. Various failure precursors have been investigated for online condition monitoring by identifying, interpreting and calibrating specific performance indicators to decode their health state [3] [4], which can be obtained from IGBT modules themselves or their auxiliary circuits.…”

Section: Introductionmentioning

confidence: 99%

In Situ Diagnosis of Multisite Wire Bonding Failures for Multichip IGBT Power Modules Based on Crosstalk Voltage

Zhang

et al. 2023

IEEE Trans. Compon., Packag. Manufact. Technol.

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The online detection of aging bond wires is key to the health status awareness of smart power converters. In this paper, a new health precursor of the gate voltage undershoot VGE(pk) of the complementary switch in the half-bridge structure is proposed. It can be used to identify and distinguish multi-site bonding wire failures for both insulated gate bipolar transistors (IGBTs) and freewheeling diodes (FWDs) in multichip IGBT modules. A theoretical analysis is conducted to derive this novel precursor, which is then verified by experimental results. Then, a dedicated read-out circuit is designed for the data acquisition front end that can be integrated into gate drivers for in-situ monitoring. Finally, the effectiveness of this method is evaluated under changing operating conditions including the DC-bus voltage, the load current, and the junction temperature. The effects of their fluctuations are studied and quantified, with corresponding calibration relationships provided to improve precursor accuracy.Index Terms-Bond wire diagnosis, crosstalk phenomenon, freewheeling diode (FWD), insulated gate bipolar transistor (IGBT).

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A Finite Element Analysis on the Reliability of Heavy Bonding Wire for High-Power IGBT Module

Cited by 21 publications

References 17 publications

IGBT finite element model for fibre bragg grating sensor installation analysis

IGBT finite element model for fibre bragg grating sensor installation analysis

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

In Situ Diagnosis of Multisite Wire Bonding Failures for Multichip IGBT Power Modules Based on Crosstalk Voltage

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