A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Triet, Nguyen Minh; Trung, Tran Quang; Hien, Nguyen Thi Dieu; Siddiqui, Saqib; Kim, Do-Il; Lee, Jai Chan; Lee, Nae‐Eung

doi:10.1007/s12274-015-0843-6

Cited by 18 publications

(8 citation statements)

References 37 publications

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“…To the best of our knowledge, this value represents the highest mobility for Fe-FETs using P(VDF-TrFE) and amorphous oxide semiconductors. 7,8,[26][27][28][29] The anticlockwise direction of the current hysteresis reveals that the charge-switching behavior is attributed to the dipolar polarization of P(VDF-TrFE) instead of charge trapping in the semiconductor layer. 30 Thus, when V G is set to 0 V, our FET device exhibits two states with different electrical conductions, namely, the off and on states.…”

Section: Resultsmentioning

confidence: 99%

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

et al. 2016

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Section: Resultsmentioning

confidence: 99%

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

et al. 2016

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“…Another method toward magnetoelectric OFET (Figure 42i) relies on a magnetic-responsive stacked heterostructures. 380 The heterostructures comprise a combination of a piezoelectric film (P(VDF−TrFE)) (182) and magnetostrictive components (CoFe 2 O 4 ), which was used as a multifunctional gate dielectric layer (Figure 42j). The sensing mechanism of magnetoelectric OFETs was based on the magnetoelectric coupling effect, that is, the coupling between the magnetostrictive and piezoelectric phases.…”

Section: Other External Stimuli-responsive Sensorsmentioning

confidence: 99%

Section: Building Functional Devices Based On Ofetsmentioning

confidence: 99%

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

et al. 2020

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Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today’s microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.

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“…Besides the above-mentioned silicon related development strand, novel devices and dielectric materials are used in various applications besides the traditional semiconductor information technology (IT). Examples include thin film transistors (TFTs), smart sensor systems utilizing piezotronics and piezo-phototronics, biomechanical CMOS and health care [13][14][15][16]. Due to the CMOS compatibility, AlN could be a promising material for piezo-based applications [17,18].…”

Section: Introductionmentioning

confidence: 99%

A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric

Winterfeld

Thormählen

Lewitz

et al. 2019

J Mater Sci: Mater Electron

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Piezoelectric materials have been introduced to transistor gate stacks to improve MOSFET behaviour and develop sensor applications. In this work, we present an approach to a partly industrial field effect transistor, with a gate stack based upon low temperature AlN. Using the piezoelectric effect of the nitrogen-polar AlN, we are able to drive the transistor by inducing strain across the device. To ensure maximum sensitivity, the piezoelectric material is placed as closely to the transistor channel as possible and the transistor is operated in the most sensitive part of the sub-threshold regime. This allows the detection of different magnitudes of force applied to the device and to easily distinguish between them. The created sensor was analysed using XRD, current-voltage and specific force application measurements. Furthermore, the continuous response to periodic low frequency stimulation is investigated. Therefore, we introduce a highly scalable device with a wide range of application possibilities, ranging from varying sensor systems to energy harvesting.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Cited by 18 publications

References 37 publications

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric

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