A four-stage Ku-band 1 watt PHEMT MMIC power amplifier

Liu, H.Z.; Wang, C.C.; Wang, Y.H.; Huang, J.W.; Chang, Chian-Sern; Wu, Wang; Wu, Chang-Luen; Chang, Christophe

doi:10.1109/gaas.2002.1049023

Cited by 10 publications

(3 citation statements)

References 9 publications

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“…The X-band MMICs were processed by conventional photolithography on an AlGaAs/InGaAs/GaAs PHEMT structure prepared by molecular beam epitaxy [13,14]. The fabrication includes five major steps: (1) Device isolation: The etching of AlGaAs and GaAs for the mesa was achieved by using an HF-based solution.…”

Section: Methodsmentioning

confidence: 99%

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

Chu

Huang

Liu

et al. 2006

Micro & Optical Tech Letters

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This paper presents a compact X‐band, 9 W AlGaAs/InGaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate‐length power PHEMT technology, a two‐stage power amplifier is fabricated on a 3‐mil thick wafer. While operating under 9 V DC bias condition, the characteristics of 17 dB small‐signal gain, an average of 9 W continuous‐wave output power, and 34% power added efficiency from 9.0 to 10.5 GHz can be achieved. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 257–261, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22102

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Section: Methodsmentioning

confidence: 99%

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

Chu

Huang

Liu

et al. 2006

Micro & Optical Tech Letters

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“…1. The models for 0.6, 1.5, 6, and 16.8 mm PHEMT were scaled up from the 1.2-mm PHEMT model for circuit simulation and optimization [8], [11], [12].…”

Section: Circuit Designmentioning

confidence: 99%

A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

Chu

Huang

Liu

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-input and output impedance. Based on 0.35-m gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB smallsignal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved. Index Terms-Monolithic microwave integrated circuit (MMIC), power amplifier (PA), pseudomorphic high electron mobility transistors (PHEMTs), X-band.

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“…They are limited to produce very high output power, however they have some advantages such as outstanding high frequency characteristics and mature manufacturing process technology compared with GaNbased power amplifiers. In recent years, GaAs-based power amplifiers in Ku-band with 1 ~ 2W output power have been demonstrated [1][2][3][4][5][6].…”

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confidence: 99%