A full 3D model of the modulation efficiency of a submicron complementary metal–oxide–semiconductor (CMOS)-compatible interleaved-junction optical phase shifter

Shaikh, Abdurrahman Javid; Packeer, F.; Baig, Mirza Muhammad Ali; Sidek, Othman

doi:10.1007/s10825-019-01366-8

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2022

Publication Types

Select...

Article1

Other1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Silicon modulator based on omni junctions by effective 3D Monte-Carlo method

et al. 2022

View full text Add to dashboard Cite

3D doping structure has significant advantages in modulation efficiency and loss compared with 2D modulator doping profiles. However, to the best of our knowledge, previous work on 3D simulation methods for interdigitated doping designs applied simplified models, which prohibited complex 3D doping. In this work, innovative omni junctions, based on the effective 3D Monte-Carlo method, are believed to be the first proposed for high-performance modulators. Simulation results show that the modulation efficiency reaches 0.88 V·cm, while the loss is only 16 dB/cm, with capacitance below 0.42 pF/mm. This work provides a modulator design with superior modulation efficiency and serviceability for high-speed datacom.

show abstract