A Fully-Integrated High-Power Linear CMOS Power Amplifier With a Parallel-Series Combining Transformer

Kim, Ji‐Hwan; Kim, Woonyun; Jeon, Haemin; Huang, Yanyu; Yoon, Young; Kim, Hyungwook; Lee, Chang-Ho; Kornegay, K.T.

doi:10.1109/jssc.2011.2180977

Cited by 62 publications

(24 citation statements)

References 14 publications

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“…The performance of the designed PA is summarized and compared to previously reported power combining CMOS PAs with the balanced structure in Table IV. Comparing with references with ([2], [11]) or without ( [3], [8], [10]) power mode control, the PAE at back-offs from P 1-dB is distinctly improved. Reference [8] exhibits high peak drain efficiency, but the linear efficiency was not so good and the drain efficiency decreased sharply at back-off region.…”

Section: Measurement Resultsmentioning

confidence: 78%

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Fully-integrated linear CMOS power amplifier with proportional series combining transformer for S-Band applications

et al. 2018

IEICE Electron. Express

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A novel proportional series combining transformer using for power amplifier (PA) is presented. Compared with balanced series combining structures, the high efficiency range is extended by sophisticated power adjusting and impedance tuning. As a proof-of-concept, a 2.5 V dual-channel PA with the proposed transformer was implemented in standard 0.18-µm CMOS process. The fabricated PA achieved a saturated output power (P sat ) of 28 dBm and a maximum linear output power (P 1-dB ) of 26.8 dBm with the power added efficiency (PAE) of 33.5% and 31%, respectively. With power mode control, the high efficiency range exceeded 8.2 dB. The PA satisfied EVM requirements of LTE 2.3 GHz 20 MHz/64-QAM signal and WLAN 802.11g signal, respectively. Keywords: power amplifier, transformer, power combiner, proportional, power mode control Classification: Integrated circuits

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Section: Measurement Resultsmentioning

confidence: 78%

“…It is worth noting that CMOS PAs, as low cost solution, still are good candidates for portable wireless applications [1,2,3]. It is certain that CMOS PAs need adopt kinds of techniques to overcome its high parasitic loss and low breakdown voltage [4].…”

Section: Introductionmentioning

confidence: 99%

Fully-integrated linear CMOS power amplifier with proportional series combining transformer for S-Band applications

et al. 2018

IEICE Electron. Express

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“…In [14], a hybrid-type power-combining transformer, parallel-series combining transformer (PSCT) capable of combining four push-pull power stages with only 55% of the occupied area compared to the square-typed SCT with similar primary inductance was demonstrated. Nonetheless, the PSCT is still area consuming for the case of combining four push-pull power stages and occupies an area of 0.83 mm .…”

Section: Power-combining Transformers: Distributed Active Transfomentioning

confidence: 99%

A 1.2-V 90-nm Fully Integrated Compact CMOS Linear Power Amplifier Using the Coupled L-Shape Concentric Vortical Transformer

Yang

Chen

2014

IEEE Trans. Microwave Theory Techn.

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This paper presents a 90-nm fully integrated CMOS linear power amplifier (PA) using a coupled L-shape concentric vortical transformer (CL-CVT) for the fourth-generation long-term evolution (LTE) communication standard. Using the proposed output combining CL-CVT architecture, the outer diameter required by the power combiner is reduced by 66% compared to the distributed active transformer with similar performance. Moreover, the PA is able to efficiently combine four push-pull output stages and achieve nearly constant power over several LTE bands with a total chip area less than 1 mm . With a 1.2-V supply voltage, the PA delivers 27.3-dBm maximum output power with a peak drain efficiency of 47% at 2.4 GHz. Using a 20-MHz LTE 16-QAM test signal, the PA achieves 24.6% power-added efficiency at an output power level of 22 dBm and passes the spectral requirements defined by the LTE standard without using any pre-distortion or calibration techniques. Index Terms-CMOS power amplifier (PA), fourth generation (4G), linear, long-term evolution (LTE), power combiner, transformer, wideband.0018-9480

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“…Unfortunately, the problem becomes more severe in CMOS process, which has a low break down voltage of the transistor and lossy silicon substrate . The performance of the PA is critical to the overall system, so research on PAs continues and many designs for PAs in the CMOS process are still being reported and confirm their feasibility …”

Section: Introductionmentioning

confidence: 99%

A study comparing current and voltage combining techniques for CMOS power amplifiers for WLAN applications

Park

Lee

Park

2019

Micro & Optical Tech Letters

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This article presents CMOS power amplifiers for WLAN applications. These power amplifiers use current and voltage combining techniques for simultaneous improvement of the output power and efficiency, respectively, and are analyzed to determine which technique is more suitable for WLAN applications. The power amplifiers are fabricated with a 180 nm CMOS process. Their performance is verified using an 802.11 g modulated signal with 64 QAM, 20 MHz of bandwidth, and 54‐Mbps at 2.7 GHz. The measurements of the current and voltage combining power amplifiers show about 21.9 and 21.8 dBm of average output power, respectively, at −25 dB error vector magnitude (EVM), and about 20.2 and 18 dBm of average output power, respectively, at −30 dB EVM for a commercial specification. In addition, the current combining PA is operated in a multi‐mode manner, which saves the power stage current about 225 mA of the power stage current at low power mode. No pre‐distortion technique is required and all components are integrated on the chip.

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A Fully-Integrated High-Power Linear CMOS Power Amplifier With a Parallel-Series Combining Transformer

Cited by 62 publications

References 14 publications

Fully-integrated linear CMOS power amplifier with proportional series combining transformer for S-Band applications

Fully-integrated linear CMOS power amplifier with proportional series combining transformer for S-Band applications

A 1.2-V 90-nm Fully Integrated Compact CMOS Linear Power Amplifier Using the Coupled L-Shape Concentric Vortical Transformer

A study comparing current and voltage combining techniques for CMOS power amplifiers for WLAN applications

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