A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Abstract

Abstract-Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closedloop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135 C under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%.Index Terms-CMOSFET power amplifiers, CMOS RF, distributed active transformer (DAT), global system for mobile communications (GSM), power control, reliability.

Derivation of Closed-Form Design Equations for Idealized Operation of Inverse Class-E Power Amplifiers at Any Duty Ratio

“…From the figure, it can be seen that the peak switch voltage is always larger than 2 times the supply voltage. To ensure reliable and safe circuit operation, namely, to prevent the active device (the switch) from breakdown, the supply voltage should be chosen at a level which is considerably lower than the device breakdown voltage [14], [15]. In addition, compared to other technologies, this issue is especially critical in CMOS because of its relatively low breakdown voltage [16]- [19].…”

Evolution of RFIC Handset PAs

“…Nevertheless, many research activities and industrial efforts have been carried out to improve the siliconbased PA performance and displace the dominance of GaAs HBT PAs in the handset market. Recent data is more promising for CMOS GSM PAs [8] and SiGe HBT linear PAs [9]. Samsung and Amalfi are currently sending samples of saturated GSM and linear CMOS PAs to handset original equipment manufacturers (OEMs).…”

A circuit technique to compensate PVT variations in a 28 nm CMOS cascode power amplifier

“…Since those results show the potential to integrate the PA into a complete transceiver chain on a single die, the inherent linearity versus efficiency tradeoff in PAs becomes even more important than it has been in the past. Therefore, various circuit techniques have already been proposed to linearize the gain stage [4], to boost maximum output power [5], or to make the PA robust versus high voltage swing [6], [7], which is a major concern in submicron CMOS circuits. Another inherent characteristic in semiconductor circuits is a strong dependency on PVT variations.…”