A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C

Tian, Ye; Zetterling, Carl-Mikael

doi:10.1109/ted.2017.2700632

Cited by 19 publications

(9 citation statements)

References 24 publications

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“…Resistor manufacturers have made great effort to develop high-temperature resistors. Table 7 summarizes some commercially manufactured resistors with some short comments [16].…”

Section: High-temperature Componentsmentioning

confidence: 99%

“…Consequently, SiC devices are quite a promising solution to converters tailored for high-temperature applications. In theory, the permissible junction temperature of SiC power electronic devices can reach as large as 600 °C, thanks to the wide band-gap of the semiconductor material, which is about three times of that of Si material [16]. The integrated power modules operating in the full temperature range are expected to be widely applied in the foreseeable future.…”

Section: Introductionmentioning

confidence: 99%

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Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

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The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

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“…Resistor manufacturers have made great effort to develop high-temperature resistors. Table 7 summarizes some commercially manufactured resistors with some short comments [16].…”

Section: High-temperature Componentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

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“…Some basic analog designs were also tested, such as Darlington pairs [38] and Schmitt triggers [51]. A latched comparator [52] and fully differential amplifier [39] were made separately as building blocks for a Sigma-Delta modulator [53]. An integrated digital-to-analog con-verter(DAC) has also been made [54].…”

Section: Circuit Designmentioning

confidence: 99%

Bipolar integrated circuits in SiC for extreme environment operation

Zetterling

Hallén

Hedayati

et al. 2017

Semicond. Sci. Technol.

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Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

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“…There are several device options, such as MOSFET [14], [15], [16], JFET [17], [18] and BJT [19], [20], [21], in the SiC circuit design for > 400 • C applications. BJT is more thermally stable compared to MOSFET.…”

Section: Introductionmentioning

confidence: 99%

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

Hou

Shakir

Hellström

et al. 2020

IEEE J. Electron Devices Soc.

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An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and digital electronic circuits must be addressed. Here, we demonstrate a novel SiC image sensor based on our in-house bipolar technology. The sensing part has 256 (16×16) pixels. The digital circuit part for row and column selection contains two 4-to-16 decoders and one 8-bit counter. The digital circuits are designed in transistor-transistor logic (TTL). The entire circuit has 1959 transistors. It is the first demonstration of SiC opto-electronic on-chip integration. The function of the image sensor up to 400 • C has been verified by taking photos of the spatial patterns masked from UV light. The image sensor would play a significant role in UV photography, which has important applications in astronomy, clinics, combustion detection and art. INDEX TERMS Silicon carbide (SiC), image sensor, ultraviolet (UV), photodiode, high temperature, bipolar junction transistor (BJT), transistor-transistor logic (TTL).

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A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C

Cited by 19 publications

References 24 publications

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Bipolar integrated circuits in SiC for extreme environment operation

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

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