A gate probe method of determining parasitic resistance in MESFET's

Holmstrom, R.; Bloss, Walter L.; Chi, J.Y.

doi:10.1109/edl.1986.26419

Cited by 41 publications

(7 citation statements)

References 4 publications

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“…12; the extrapolated value for CJ = 0 gives R3 = 6.24 a. At last, by solving the linear system given by equations (l), (4), (8) FET model, compared with the experimental one is shown in Fig. 14. The complete circuit model of the MESFET, as presented by the computer screen, is shown in Fig.…”

Section: Resultsmentioning

confidence: 98%

A computer aided procedure for experimental chamcterization and small signal modeling of MESFETs

Ferrero

Pisani

1990

Trans Emerging Tel Tech

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A system which integrates in a single workstation the experimental procedures and data processing in order to carry out small‐signal equivalent circuits of microwave FET is presented. The workstation basic hardware consists of a HP8510 vector network analyzer, a dual programmable power supply, a dc bias switching box and a HP9000 series 300 desktop computer. While other approaches base the extraction of circuit elements mainly from scattering parameter measurements, the developed one implements several types of measurement techniques both in dc (pulsed), and in, necessary to directly extract several circuit parameters. Thus the optimization of a great number of parameters is avoided, which often leads either to an ill conditioned determination of element values, or to extraction of physically meaningless parameters. Furthermore by means of the described procedure several MESFET parameters tied to the technological process can be achieved. Some experimental results obtained with on wafer ion implantated devices show a very good model accuracy reached in the frequency band from 1 GHz to 18 GHz.

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Section: Resultsmentioning

confidence: 98%

A computer aided procedure for experimental chamcterization and small signal modeling of MESFETs

Ferrero

Pisani

1990

Trans Emerging Tel Tech

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“…R S can be measured using the gate probe method, as described in detail in Ref. [11]. The gate probe method shows that an accurate R S can be extracted from the plot of the gatesource bias (V GS ) versus I DS under the conditions of I GS I DS , the relatively low drain-to-source bias (V DS ), and the constant forward gate-source current I GS .…”

Section: Resultsmentioning

confidence: 99%

“…Here, R GS is the gate-to-source access resistance. As [1,6,11] According to the gate probe method, the value of R S is equal to the slope in the V GS versus I DS plot, and the prominent linear relationship of V GS versus I DS suggests that an accurate extraction of R S can be obtained. In order to study the effect of PCF scattering on R S in the temperature range 300-500 K, the measurements of R S were conducted at the same value of I GS under the above different temperatures.…”

Section: Resultsmentioning

confidence: 99%

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Liu

Lin

et al. 2017

Chinese Phys. B

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The parasitic source resistance (R S ) of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) is studied in the temperature range 300-500 K. By using the measured R S and both capacitance-voltage (C-V ) and current-voltage (I-V ) characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field (PCF) scattering exhibits a significant impact on R S at the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of R S .

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“…Usually the RF characterisation is preceded by DC evaluation of the devices. Different techniques [2] - [5] can be used to determine the gate source and drain resistances (Rge Rsp Rd). In the paper L6], Fukuis f21 method has been recommended.…”

Section: Introductionmentioning

confidence: 99%

Determination of the MESFET Resistive Parameters using Rf-Wafer Probing

Vogel

1987

17th European Microwave Conference, 1987

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A simple method has been proposed to measure the resistive parameters of MESFET's. An equivalent circuit of the forward biased FET valid in a low frequency Limit which allows to determine the gate, source and drain parasitic resistances from the measured parameters was developed. The ideality factor of the gate diode and the channel resistance can also be simply determined. The method does not require separate DC characterisation and can be applied in conjunction with the small-signal microwave S-matrix measurements.

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A gate probe method of determining parasitic resistance in MESFET's

Cited by 41 publications

References 4 publications

A computer aided procedure for experimental chamcterization and small signal modeling of MESFETs

A computer aided procedure for experimental chamcterization and small signal modeling of MESFETs

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Determination of the MESFET Resistive Parameters using Rf-Wafer Probing

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