A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD

Mahapatra, Souvik; Diwakar, Himanshu; Thakor, Karansingh; Choudhury, Nilotpal; Chatterjee, Payel; Kumar, Satyam; Singhal, Udit; Sharma, Uma

doi:10.1109/ted.2023.3308526

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A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD

Cited by 5 publications

References 53 publications

A TCAD Framework for HCD in n-MOSFETs for PMIC Applications

A TCAD Framework for HCD in n-MOSFETs for PMIC Applications

A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions

A TCAD to SPICE Simulation Framework for Analysis of Device to Circuit BTI and HCD Aging: Invited Paper

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