A half-micron pitch Cu interconnection technology

Ueno, Kazuyoshi; Ohto, K.; Tsunenari, K.

doi:10.1109/vlsit.1995.520843

Cited by 7 publications

(4 citation statements)

References 1 publication

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“…The resistivity values are one order of magnitude higher than literature data for both bulk and thin Cu films. 5,8,[10][11][12][13][14][15][16][17] Based on the obtained results, the differences between the liquidphase deposition and MOCVD are considered. The mechanism of Cu film deposition for the MOCVD using Cu 1ϩ (hfac)(vtms) has been described by the chemical reaction 13,14,16 2Cu 1ϩ (hfac)(vtms)(g) r Cu(s) ϩ Cu 2ϩ (hfac) 2 (g) ϩ 2(vtms)(g) [1] where (s) and (g) denote a metallic substrate and the gas phase, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…As post-Al interconnections, copper (Cu) interconnections with low-k interlayer dielectric films are increasingly attractive, because of the higher electromigration resistance, in addition to the lower resistivity of Cu than Al. [3][4][5] The various Cu films deposition techniques have been intensively investigated for the ULSI applications. The Cu films have been deposited by plating, 6,7 sputtering, 8,9 and metallorganic chemical vapor deposition (MOCVD) techniques.…”

Section: Multilevel Interconnection Technologies Have Been Increasinglymentioning

confidence: 99%

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A Process for Copper Film Deposition by Pyrolysis of Organic Copper Materials

Homma¹,

Takasaki²,

Yamaguchi

et al. 2000

J. Electrochem. Soc.

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Multilevel interconnection technologies have been increasingly important for ultralarge scale integration (ULSI) devices. Metal film deposition techniques have been one of the key processes in the multilevel interconnections, as well as low-k interlayer dielectric films. 1 Aluminum (Al) based interconnections with barrier liners have been widely used for the ULSI devices to date. 1,2 However, these Al-based materials will not be used in future devices with the design rule below 0.18 m, because of incremental wiring resistance and of degradation of reliability. As post-Al interconnections, copper (Cu) interconnections with low-k interlayer dielectric films are increasingly attractive, because of the higher electromigration resistance, in addition to the lower resistivity of Cu than Al. 3-5 The various Cu films deposition techniques have been intensively investigated for the ULSI applications. The Cu films have been deposited by plating, 6,7 sputtering, 8,9 and metallorganic chemical vapor deposition (MOCVD) techniques. [10][11][12][13][14][15][16][17] In the electroplating techniques, the Cu seed layer is needed on barrier metals and is deposited by sputtering technique. 8 As for the MOCVD technique, copper hexafluoroacetylacetonate vinyltrimethylsilane [(C 5 HF 6 O 2 )Cuи(CH 3 ) 3 Si-CHϭCH 2 , Cu 1ϩ (hfac)(vtms)] has been mainly used as the Cu 1ϩ precursor. [10][11][12][13][14][15][16] The Cu films have been deposited at the substrate temperatures ranging from 130 to 250ЊC. Misawa et al. have revealed that the resistivity of Cu films deposited at 200ЊC was 2.05 ⍀-cm, and it decreased to 1.98 and 1.88 ⍀-cm by annealing at 300 and 500ЊC, respectively. 10 The technology has been applied to generate quarter-micron Cu interconnections. Gelatos et al. have investigated Cu film deposition in the presence of water vapor. 11 It was revealed that the addition of an optimum amount of water can increase the deposition rate and decrease the nucleation time without a loss of resistivity. Selective Cu film deposition on a titanium nitride (TiN) film at the substrate temperature of 170ЊC in the presence of borophosphosilicate glass (BPSG) films, with nitrogen (N 2 ) plasma pretreatment has also been demonstrated. 12 Norman et al. have improved the controllability of precursor delivery and the properties of Cu film deposition by the additions of hexafluoroacetylacetone (Hhfac) and trimethylvinylsilane (tmvs), respectively, along with a description of the mechanism responsible for the improvements. 14 Jain et al. have also investigated the selective Cu film deposition with the predosing of hexamethyldisilazane (HMDS). 15 They have revealed that the predosing with HMDS can achieve the selective deposition in the absence of water. They also have improved the deposition rate by predosing with HMDS in the presence of water. Naik et al. have achieved the Cu film deposition at temperatures as low as 130ЊC, and confirmed that Cu(hfac) 2 is the reaction by-product. 16 Borghakar et al. have proposed a liquid delivery system for supplying...

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Section: Resultsmentioning

confidence: 99%

Section: Multilevel Interconnection Technologies Have Been Increasinglymentioning

confidence: 99%

A Process for Copper Film Deposition by Pyrolysis of Organic Copper Materials

Homma¹,

Takasaki²,

Yamaguchi

et al. 2000

J. Electrochem. Soc.

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“…As the electronics using GHz frequency and portable system have been increased, interconnection technology of printed circuit board and electronic package has also been required to show their valuable performances [1][2][3]. Especially, finer pattern on printed circuit board affects multi-functions of final electronics such as device array, signal transmissibility and so on [4][5]. We have aimed at the optimized fabrications conditions of improving etching factor of copper pattern during subtractive process, where the copper pattern was etched by width of 100㎛ and pitch of 35㎛ .…”

Section: Introductionmentioning

confidence: 99%

Improvement in Etching Factor of Micro Patterns by Controlling Residual Stress of Copper Thin Foil

Lee

2010

AMR

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The effectiveness of residual stress on forming copper patterns of printed circuit board was investigated during applied thermal conditions. Generally, the electrolytic copper foil showed a compressive residual stress about -55~-60MPa as received, which easily caused to form copper patterns irregularly when the pattern was etched finely. The compressive residual stress was relaxed with applying heat-treatment for a few hours. However, we observed that the compressed residual stress of copper foil tended to be relaxed, constant, and compressed again during heat-treatment process, which is mainly considered as that the grain of copper is grown restrictively within a Cu thin foil layer. We suggested a quantitative method for controlling grain size, grain distribution and relaxing stress of copper foil, which was very helpful for increasing an etching factor to decrease pattern width.

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“…The currently used aluminum ͑Al͒ -based metal wires and the silicon dioxide ͑SiO 2 ͒-based intermetal dielectric ͑IMD͒ are no longer adequate to meet the requirement of multilevel interconnect. [1][2][3][4][5][6] New conductors with lower electrical resistivity and new dielectrics with lower dielectric constant are thus inevitable for high-performance ultralarge-scale integrated circuits. At the same time, the current density of metal wires increases and is close to the reliability limitation of Al-interconnect.…”

mentioning

confidence: 99%

Electrical Stability and Reliability of Ultralow Dielectric Constant Porous Carbon-Doped Oxide film for Copper Interconnect

Fang

Tsui

2005

J. Electrochem. Soc.

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Nanoporous carbon-doped oxide ͑CDO͒ is a promising low dielectric constant ͑low-k͒ intermetal dielectric ͑IMD͒ for Cu interconnect. The electrical stability and reliability of CDO strongly depend on the contacted metal. An electrical instability model considering metal ion diffusion, dielectric polarization, and carrier injection is proposed for CDO under electrical stress. Both Al and Cu are not suitable for contact with CDO because they can be driven easily into CDO. Fortunately, TaN shows no mobile ion issues when in contact with CDO. The electron transport mechanism is identified to be Schottky emission at low electric field and low temperature. As metal ions are injected into CDO film, the electron transport mechanism changes to Frenkel-Pool emission at high temperature and high electric field. The injection of metal ions into CDO also degrades the time-dependent dielectric breakdown ͑TDDB͒ lifetime of CDO. Fortunately, the commonly used diffusion barrier TaN is an excellent contact metal with CDO. The 1-year-long TDDB lifetime allows an electric field stronger than 2 MV/cm, and the TDDB lifetime at 0.5 MV/cm becomes longer than 10 years by several orders of magnitude. It is concluded that the nanoporous CDO is a very promising IMD for next-generation interconnect systems.With the progress of integrated circuit process technology, the feature size is scaled down continuously. As the device performance and the circuit density are improved due to shorter channel length and smaller device geometry, the resistance and capacitance of multilevel interconnect increase due to the thinner metal wires and narrower space between wires. Therefore, the circuit performance becomes limited by the resistance-capacitance delay of interconnect. The currently used aluminum ͑Al͒ -based metal wires and the silicon dioxide ͑SiO 2 ͒-based intermetal dielectric ͑IMD͒ are no longer adequate to meet the requirement of multilevel interconnect. 1-6 New conductors with lower electrical resistivity and new dielectrics with lower dielectric constant are thus inevitable for high-performance ultralarge-scale integrated circuits. At the same time, the current density of metal wires increases and is close to the reliability limitation of Al-interconnect. Higher electromigration resistance becomes another criterion for new conductors. Copper ͑Cu͒ and low dielectric constant ͑low-k͒ materials are thus selected to replaced Al and SiO 2 .The implementation of copper interconnect with a low-k material is the only solution to reduce overall signal delay in the future several technology nodes. The International Technology Roadmap for Semiconductors ͑ITRS͒ requests low-k material with an effective k value of 2.3-2.7 in 2007. 7 Although several porous dielectric materials have been proposed with an acceptable k value, 8-10 their electrical and thermal stability has not been investigated comprehensively. Recently, metal ion diffusion into porous dielectric film has been reported. [11][12][13][14] This phenomenon is important for dielectric film electri...

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A half-micron pitch Cu interconnection technology

Cited by 7 publications

References 1 publication

A Process for Copper Film Deposition by Pyrolysis of Organic Copper Materials

A Process for Copper Film Deposition by Pyrolysis of Organic Copper Materials

Improvement in Etching Factor of Micro Patterns by Controlling Residual Stress of Copper Thin Foil

Electrical Stability and Reliability of Ultralow Dielectric Constant Porous Carbon-Doped Oxide film for Copper Interconnect

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