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Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0 . 1 2~m Cu interconnections whose effective resistivity is 1.9pQcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.

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Stable injection locking light amplification with over 13-dB gain value was successfully demonstrated in the He-Ne 1.15-μm laser system stabilized by hill-climbing servo frequency control. Basic formulas for injection locking light amplifier operation were derived, taking the inhomogeneous gain effect into consideration. The input power dependence of the injection locking frequency range was measured in detail for several mirror reflectivities. Deviation from the well-known square-root dependence of the locking range versus input power relations was observed and ascribed to the inhomogeneous gain effect. Relations between input and output light polarizations were investigated.

Quarter-micron interconnection technologies for 256-Mbit dynamic random access memories (DRAMs) are reviewed. Since the density of memory capacity is increased, both decreasing feature size and increasing sophistication of cell structures are required, resulting in three-dimensional structures. This trend leads us to the introduction of new interconnection technologies which have good coverage, low resistivity and high reliability, because the three-dimensional device structure requires high aspect-ratio contact hole plugs and narrow-pitch metal lines on different surface levels. The state of the art and current problems are discussed for quarter-micron contact-hole filling and quarter-micron interconnection lines.