Tungsten plug-in wiring structure for high density three dimensional devices

Characterization of Encroachment of Selective Chemical Vapor Deposition of Tungsten at the Edge of Contacts

“…Recently, an in situ plasma clean, to remove any native oxide on the silicon substrate prior to W deposition, improves the contact resistance and the morphology of W deposited by Sill4 reduction 13"~5 as well as the morphology of W deposited by Si reduction. 14 In previous work 2 we have examined the effect of SiH4reduced selective W deposition on shallow junctions as a function of plasma preclean conditions. Devices with low junction leakage were obtained even for W deposition temperatures above 330~ by performing an in situ plasma clean prior to deposition.…”