A High Current Gain Si Metal Insulator Semiconductor Tunnel Emitter Transistor

Abstract

The mixing process is a crucially important stage in the operation of biological and chemical microfluidic devices. If the mixing is inadequate, reactants do not fully interact with each other, and the device may not operate properly. This paper describes a simplified microfluidic mixer (different from a chaotic mixer) which can uniformly mix a buffer solution with living cells by applying an AC electric charge. Diffusion of the living cells into the buffer solution occurs rapidly following the interface of the flow stream with the electric charge; no further agitating step is needed. To accomplish this, an asymmetric pair of electrodes was integrated at the inlets of the buffer solution and the cells fluid. When the buffer solution and the cells fluid were introduced into one flow path, they remained limited to that flow stream. When the electrodes were charged, however, the cells in a short distance were efficiently moved into the solution flow, and the original fluids were mixed. The mixing efficiency depends on the polarizability of the cells, and this in turn is governed by the dielectric properties of the cells, the medium, and the solvent. This micro device, capable of efficiently mixing living cells with a buffer solution, may potentially allow biological mixing to be done outside of hospitals, in facilities without biological analyzing instruments. #

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

“…For the oxide films grown under similar conditions, the SiO 2 thickness deviation was estimated as σ d ∼ 2 Å using the transmission electron microscope (for a reference, the SiO 2 monolayer thickness equals 3.1 Å [1]). At the qualitative level, the behaviour of studied devices was similar to the theoretical prediction for it and to the independent data of other authors [7][8][9][10][11]. The stability and reproducibility of characteristics were sufficient for reliable measurements.…”

“…In a field-effect transistor, the tunnelling is a parasitic effect, but there are another elements-MOS photodiodes (e.g. [5]) and transistors with a tunnel MOS emitter [7][8][9][10][11][12]-whose operation is just based on the tunnelling through the oxide. Anyway, the charge transport through thin SiO 2 film requires careful consideration.…”

Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces

“…Barrier height and effective masses of the electrons and holes control the current gain in case of direct tunneling. The main interest in the TEBT approach in recent years was an attempt to combine CMOS and bipolar technology using exactly the same device (2)(3)(4). In this work, it is proposed and demonstrated that the TEBT is a useful tool for characterizing and better understanding of the properties of metal insulator stacks, somewhat in line with Eitan et al (5) who have studied the conventional silicon -silicon dioxide structure.…”

“…Silicon MOS TEBTs exhibit high current gain (2)(3)(4), implying that the recombination velocity at the ideal Si-SiO 2 interface is very low. The TEBTs reported here exhibit some current gain, but not as high as in the silicon MOS case.…”

Quantization effects in hole inversion layers of tunnel MOS emitter transistors on Si (100) and (111) substrates atT= 300 K

“…. 10)m 0 [19]) and χ = χ h , was rejected, since it would lead to unrealistically small values of j h (both 'classical' and quantum) and would predict very large values of current gain ( 10 4 ) that are never observed experimentally [3,5,7,20].…”