A high efficient 820 nm MOS Ge quantum dot photodetector

Hsu, B.-C.; Chang, Shu−Tong; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Zingway; C, Liu

doi:10.1109/led.2003.812558

Cited by 55 publications

(27 citation statements)

References 9 publications

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“…In this way, the activated carriers in the Ge-nps would tunnel to the nearest Ge-nps, following the path with the lowest resistance. A rather similar transport mechanism was suggested as a result of the analysis conducted by B. C. Hsu and co-workers [38]. When the photodetector test structure is illuminated with integral light at reverse bias, a significant increase of the current density by a factor of about 10 3 is observed as a result of the separation of electron–hole pairs generated in the Ge-nps and the Si substrate.…”

Section: Resultssupporting

confidence: 60%

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

Stavarache

Maraloiu

Prepelita

et al. 2016

Beilstein J. Nanotechnol.

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SummaryObtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 %) into SiO2. Crystalline Ge nanoparticles were directly formed during co-deposition of SiO2 and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge–Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO2/ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW−1), fast response time (0.5 µs at 4 kHz) and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si-based integrated optoelectronics.

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Section: Resultssupporting

confidence: 60%

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

Stavarache

Maraloiu

Prepelita

et al. 2016

Beilstein J. Nanotechnol.

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“…By introducing Ge quantum dots and MOS tunneling structure to the device [6,7] , a 1.55um Ge island RCE detector with the responsivity of 0.028 mA/W has been demonstrated. Compared with conventional PIN detectors, it has nearly threefold enhancement.…”

Section: Soi Based Photodetectormentioning

confidence: 99%

Recent progress of SOI-based photonic devices

Chen

et al. 2005

Optoelectronic Materials and Devices for Optical Communications

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SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4×4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16×16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 m increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2~3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 s and 2.3 s, respectively.

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“…The main draw back of the latter devices, QRIPs and QDIPs, are the higher value of the obtained dark current in contrast to the QWIPs. And hence the smaller values of responsivity and detectivity are acquired, although a great effort is done to decrease the dark current as in [11,12] or to develop a hybrid of QDs in wells (DWEEL) as in [13]. When QDIPs and QRIPs are compared with each other, as in previous work [6,14,15], the QRIPs denote a smaller values of dark current and large space region between it and induced photocurrent.…”

Section: Introductionmentioning

confidence: 99%

Detectivity Performance of Quantum Wire Infrared Photodetectors

Nasr

2011

Joc

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The manuscript is devoted to calculate the detectivity, Figure of merit, of the quantum wire infrared photodetectors (QRIPs). The importance arises from two points. Firstly, the QRIPs give a stable and controllable performance in comparison with quantum dot infrared photodetectors (QDIPs). Secondly, the gap; difference between the photo and dark currents, is high enough to obtain a distinguished responsivity and detectivity. So, the dependence of detectivity behavior on the QRIPs parameters is discussed. From the results, one can notice that the superiority of QRIPs over the QDIPs which gives higher values of detectivity, about ten times or higher the latter under the same conditions. Hence, an improvement of the responsivity and detectivity of QRIPs compared to QDIPs has been perceived.Keywords. Nanotechnology IR detectors, quantum wires, infrared photodetectors, photo and dark current, responsivity and detectivity, average quantum wire density, lateral size, operating temperatures.

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A high efficient 820 nm MOS Ge quantum dot photodetector

Cited by 55 publications

References 9 publications

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

Recent progress of SOI-based photonic devices

Detectivity Performance of Quantum Wire Infrared Photodetectors

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