A High Linearity, 2.8 GS/s, 10-bit Accurate, Sample and Hold Amplifier in 130 nm SiGe BiCMOS

Tantawy, Ramy; Patel, Vaama; Smith, D. S.; Casto, Matthew; Duncan, Lucas; Dupaix, Brian; Boglione, Luciano; Goodman, John M.; Khalil, Waleed

doi:10.1109/iscas.2018.8351154

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…The prototype is implemented in 2-µm GaAs HBT technology. Although many high-speed high linearity THAs have been reported using InP, SiGe and advanced CMOS process [7,8,9,10], GaAs HBT has a number of advantages for fast THA circuits, such as high g m , good V BE matching and commercial maturity. This work detailed the circuit design and measurements of a high linearity 8 GSa/s sampling rates GaAs HBT MMIC THA for future high-speed ADC used in direct conversion receivers.…”

Section: Introductionmentioning

confidence: 99%

A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology

Zhang

et al. 2018

IEICE Electron. Express

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A high linearity full differential 8 GSa/s track-and-hold amplifier (THA) is presented in this paper. The proposed THA is designed and implemented using 2-µm GaAs HBT technology to be targeted for faster operation in sampling systems at a clock frequency of GHz. In this THA, an alternative switch emitter follower (SEF) is used as a switching stage with a Schottky diode for hold-mode isolation enhancement and high-speed operation. In conjunction with well-designed input buffer allows us to achieve high linearity and comparable dynamic performance. Measured small signal −3 dB bandwidth, and hold-mode isolation are better than 3.6 GHz and 40 dB, respectively. The prototype achieves a spurious-free dynamic range (SFDR) of 43.9 dB at 0.5 GHz and an average total harmonic distortion (THD) below −40 dBc up to a first Nyquist frequency of 4 GHz. This work has the potential for wideband, high speed and low distortion analog to digital converter (ADC) used in the future direct sampling systems.

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Section: Introductionmentioning

confidence: 99%