A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Sakowicz, M.; Łusakowski, J.; Karpierz, K.; Grynberg, M.; Gwarek, W.; Boubanga, S.; Coquillat, Dominique; Knap, W.; Shchepetov, A.; Bollaert, S.

doi:10.1063/1.3295528

Cited by 12 publications

(20 citation statements)

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“…We conclude that there is an optimum level of I ds that maximizes the responsivity signal whereas higher I ds values will increase NEP and decrease the photoresponse as reported in Ref. . Hence, the drain current can be increased up to an optimal level until the detector noise becomes dominant in the output signal.…”

Section: Resultssupporting

confidence: 63%

Continuous Wave Terahertz Sensing Using GaN HEMTs

Javadi

Delgado-Notario

Masoumi

et al. 2018

Physica Status Solidi (a)

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A commercial GaN high electron mobility transistor (HEMT) is investigated as efficient detector of terahertz radiations. Enhancement of the photoresponse in excess of one order of magnitude (up to 1 kV W−1) is obtained when a constant drain‐to‐source current is applied. The photoresponse remains unchanged with chopping frequency up to 5 kHz demonstrating a high‐speed response of GaN HEMT detectors. It is demonstrated that the bounding wires play an important role to couple terahertz radiations to the channel of the device. Terahertz imaging of hidden objects by using GaN HEMTs as a sensor is also demonstrated.

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Section: Resultssupporting

confidence: 63%

Continuous Wave Terahertz Sensing Using GaN HEMTs

Javadi

Delgado-Notario

Masoumi

et al. 2018

Physica Status Solidi (a)

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“…This must be partly attributed to the higher power at 0.3 THz (~6 mW) than at 0.15 THz (~3 mW) and to the coupling of the THz radiation to the device that varies with frequency. Moreover, the bonding wires and the metallic pads could play an antenna role to couple the incoming terahertz radiation (linearly polarized) to the 2D electron channel [43][44][45]. To understand how radiation is coupled, devices were rotated in the plane perpendicular to the terahertz beam, and the photoresponse signal was measured for For all the devices at 0.3 THz, a maximum of the photoresponse signal was found when the incoming radiation was parallel to the gate finger pads (see the inset of Figure 9(a) at 0°), showing a maximum photoresponse for all the devices at the same angular position.…”

Section: Polarization Sensitivity Of Photoresponsementioning

confidence: 99%

Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs

Delgado-Notario¹,

Clericò²,

Fobelets³

et al. 2018

Design, Simulation and Construction of Field Effect Transistors

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This chapter reports on an experimental and theoretical study of Schottky-gated strained-Si modulation-doped field-effect transistors (MODFETs) with different sub-micron gate lengths (100, 250, and 500 nm). Room-temperature detection of terahertz (THz) radiation by the strained-Si MODFETs was performed at two frequencies (0.15 and 0.3 THz). A technology computer-aided design (TCAD) analysis based on a two-dimensional hydrodynamic model (HDM) was used to investigate the transistor response to THz radiation excitation. TCAD simulation was validated through comparison with DC and low-frequency AC measurements. It was found that the photoresponse of the transistors can be improved by applying a constant drain-to-source bias. This enhancement was observed both theoretically and experimentally. The HDM model satisfactorily describes the experimental dependence of the photoresponse on the excitation frequency, the gate bias, and the drain-to-source current bias. The coupling of the incoming THz radiation to the MODFETs was studied at 0.15 and 0.3 THz. Finally, to demonstrate the suitability of strained-Si MODFET for terahertz applications, an image sensor within a pixel-by-pixel terahertz imaging system for the inspection of hidden objects was used.

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“…Therefore, at the higher frequency (0.3 THz) the coupling must be mainly performed through the contact pads and/or the gate fingers. These results are in agreement with previously published ones [70].…”

Section: Polarization Sensitivity Of Photoresponsesupporting

confidence: 94%

“…The photocurrent obtained under excitation at 0.15 THz was much lower than for 0.3 THz because the inefficient coupling of the THz radiation with the structure at lower frequencies. It was demonstrated that the metallic contact is better for coupling the radiation at higher frequencies [70], [84]. The behaviour of both signals when the back-gate bias is vaied is similar and repetitive at both frequencies.…”

Section: Thz Detection Measurements At Low Temperaturementioning

confidence: 94%

Silicon- and Graphene-based FETs for THz technology

Notario¹,

Antonio²

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Silicon-and Graphene-based FETs for THz technology This Thesis focuses on the study of the response to Terahertz (THz) electromagnetic radiation of different silicon substrate-compatible FETs. Strained-Si MODFETs, state-ofthe-art FinFETs and graphene-FETs were studied. The first part of this thesis is devoted to present the results of an experimental and theoretical study of strained-Si MODFETs. These transistors are built by epitaxy of relaxed-SiGe on a conventional Si wafer to permit the fabrication of a strained-Si electron channel to obtain a high-mobility electron gas. Room temperature detection under excitation of 0.15 and 0.3 THz as well as sensitivity to the polarization of incoming radiations were demonstrated. A two-dimensional hydrodynamic-model was developed to conduct TCAD simulations to understand and predict the response of the transistors. Both experimental data and TCAD results were in good agreement demonstrating both the potential of TCAD as a tool for the design of future new THz devices and the excellent performance of strained-Si MODFETs as THz detectors (75 V/W and 0.06 nW/Hz 0.5). The second part of the Thesis reports on an experimental study on the THz behavior of modern silicon FinFETs at room temperature. Silicon FinFETs were characterized in the frequency range 0.14-0.44 THz. The results obtained in this study show the potential of these devices as THz detectors in terms of their excellent Responsivity and NEP figures (0.66 kV/W and 0.05 nW/Hz 0.5). Finally, a large part of the Thesis is devoted to the fabrication and characterization of Graphene-based FETs. A novel transfer technique and an in-house-developed setup were implemented in the Nanotechnology Clean Room of the USAL and described in detail in this Thesis. The newly developed transfer technique enables to encapsulate a graphene layer between two flakes of h-BN. Raman measurements confirmed the quality of the fabricated graphene heterostructures and, thus, the excellent properties of encapsulated graphene. The asymmetric dual grating gate graphene FET (ADGG-GFET) concept was introduced as an efficient way to improve the graphene response to THz radiation. High quality ADGG-GFETs were fabricated and characterized under THz radiation. DC measurements confirmed the high quality of graphene heterostructures as it was shown on Raman measurements. A clear THz detection was found for both 0.15 THz and 0.3 THz at 4K when the device was voltage biased either using the back or the top gate of the G-FET. Room temperature THz detection was demonstrated at 0.3 THz using the ADGG-GFET. The device shows a Responsivity and NEP around 2.2 mA/W and 0.04 nW/Hz 0.5 respectively at respectively at 4K. It was demonstrated the practical use of the studied devices for inspection of hidden objects by using the in-house developed THz imaging system.

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A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Cited by 12 publications

References 0 publications

Continuous Wave Terahertz Sensing Using GaN HEMTs

Continuous Wave Terahertz Sensing Using GaN HEMTs

Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs

Silicon- and Graphene-based FETs for THz technology

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