A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

Abstract

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory

“…[6][7][8] Many efforts have been devoted to achieve high performance FRRAMs with both small RS parameters variation and excellent flexibility. [11][12][13] HfO 2 and TiO 2 are typical high dielectric constant transition metal oxides in complementary metal oxide semiconductor (CMOS) integrated circuit applications. [9,10] Some FRRAMs demonstrated fast programming speed, large storage window, excellent flexibility, and mechanical endurance.…”

Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

“…In particular, resistive random access memory (RRAM) has received special attention and been regarded as one of the most promising candidates of next generation non-volatile flash memory devices, due to its many advantages such as simple sample fabrication, low power consumption, fast writing/erasing speed of $ns, and prolonged retention time of >10 years. 4 The RRAM behaviour has been observed in many employing oxide films, [5][6][7][8][9][10][11][12][13][14][15][16][17] 2-dimension materials, [18][19][20] nanowires, 21,22 and even organic semiconductors. [23][24][25] The electronic resistive switching memory (ERSM) behaviour, which is the characteristic of asymmetric current-voltage (I-V) shapes as one important kind of RRAM, has been observed in many materials such as ZnO nanowires, MoO 3 nanobelts, BiFeO 3 nanoislands, and eumelanin nanofilms.…”

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

“…This further leads to formation of the weakest CF at the interface of two different dielectrics [ 14 , 32 ]. Hence, the redox reaction due to the migration of oxygen ions dominates the RESET process near the interface of two dielectrics, as described, with the switching mechanism in Figure 4 [ 20 , 32 ].The endurance characteristics were obtained for the tri-layer RRAM device with up to 1300 cycles with I on /I off ratio > 10, as shown in Figure 3 c, read at 0.1 V. Initial variation of low resistance state (LRS) and high resistance state (HRS) can be due to the large area of the top electrode, where a large number of conductive filaments are created during the forming process. Data retention at a read voltage of 0.1 V, for LRS and HRS, was recorded up to 10 4 s without any significant variation, as shown in Figure 3 d. To understand the performance of the proposed tri-layer RRAM device, a detailed comparison of electrical parameters is presented in Table 1 .…”