A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier

Boulais, W.; Donahue, R.S.; Platzker, A.; Huang, Jim; Aucoin, L.; Shanfield, S.; Vafiades, M.

doi:10.1109/mwsym.1994.335507

Cited by 18 publications

(6 citation statements)

References 9 publications

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“…In particular, microwave transistors and circuits incorporating AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor ͑PHEMT͒ structures have demonstrated excellent power, efficiency, and gain performance. [2][3][4][5] The most critical layer in the structure is the pseudomorphic InGaAs channel layer. Due to strain limitations between the InGaAs channel layer and GaAs substrate as well as quantum size effects, the InGaAs channel layer is approximately restricted to 20% indium content and 100-120 Å thickness.…”

Section: Improved Pseudomorphic High Electron Mobility Transistor Strmentioning

confidence: 99%

Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates

Hoke

Lyman

Mosca

et al. 1997

Journal of Applied Physics

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Single and double pulse doped pseudomorphic high electron mobility transistor structures with 110-Å-thick InGaAs channel layers have been grown on InxGa1−xAs substrates (x=0.04; 0.065) and GaAs substrates. For In0.23Ga0.77As channel layers, higher electron mobilities were obtained on In0.04Ga0.96As substrates due to reduced strain. Transmission electron microscopy micrographs on a GaAs-based sample exhibited a roughened selectively doped heterojunction but no detected misfit dislocations. Pseudomorphic structures with In0.27Ga0.73As channel layers were also grown on In0.065Ga0.935As substrates with good transport and optical properties. The properties of the analogous structure grown on GaAs were severely degraded. Transmission electron microscopy micrographs on the GaAs sample showed a very rough selectively doped heterojunction with misfit dislocations.

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Section: Improved Pseudomorphic High Electron Mobility Transistor Strmentioning

confidence: 99%

Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates

Hoke

Lyman

Mosca

et al. 1997

Journal of Applied Physics

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“…The thin film resistors are used to suppress and prevent inband and odd mode oscillations, especially in power combing configurations as described in [2], [3], and [7]. The resistive elements are used in series between the parallel drains in the output cell.…”

Section: Fig 5 Power Amplifier Mmicmentioning

confidence: 99%

A 40 GHz power amplifier using a low cost high volume 0.15 um optical lithography pHEMT process

Mays¹

2009

2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems

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A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for lowcost microwave and millimeter wave circuits. Several Ka and V Band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier.Index Terms -Microstrip components, millimeter wave power amplifier, pHEMT, impedance matching.

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“…, where ∆ൌ S ଵଵ S ଶଶ െ S ଵଶ S ଶଵ [2] Typically, |∆|<1 condition for stability is satisfied and we will discuss only the K<1 condition.…”

Section: Stabilitymentioning

confidence: 99%

“…The thin film resistors are also used to suppress and prevent in-band and odd mode oscillations from occurring, especially in power combining configurations as described in [2]- [3], [7]. These resistive elements are used in series between the parallel gate terminals of the output cell array to attenuate the gate currents caused by the self resonance associated with the intrinsic parasitics of the device and its interconnect.…”

Section: Figure 35: Load Pull Contours For Measured Toi Pae and P1dbmentioning

confidence: 99%

A 40 GHz Power Amplifier Using a Low Cost High Volume 0.15 um Optical Lithography pHEMT Process

Mays¹

2000

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The demand for higher frequency applications is largely driven by bandwidth. The evolution of circuits in the microwave and millimeter frequency ranges always demands higher performance and lower cost as the technology and specification requirements evolve. Thus the development of new processes addressing higher frequencies and bandwidth requirements is essential to the growth of any semiconductor company participating in these markets.There exist processes which can perform in the higher frequency design iii Acknowledgements

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A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier

Cited by 18 publications

References 9 publications

Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates

Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates

A 40 GHz power amplifier using a low cost high volume 0.15 um optical lithography pHEMT process

A 40 GHz Power Amplifier Using a Low Cost High Volume 0.15 um Optical Lithography pHEMT Process

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