A high-Q broad-band active inductor and its application to a low-loss analog phase shifter

Hayashi, H.; Muraguchi, Masahiro; Umeda, Yohtaro; Enoki, T.

doi:10.1109/22.554562

Cited by 48 publications

(22 citation statements)

References 17 publications

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“…In this work, we have shown that passive inductors can be used to generate the required phase shift by employing a smaller device size. Previously, Hayashi et al [10] used active inductors in a reflective-type phase shifter to obtain a 225°phase shift. Unfortunately, active inductors consume high dc power and increase the circuit and control complexity, thereby limiting the suitability for high-frequency applications.…”

Section: Effect Of Spiral Slots In the Cpw Groundmentioning

confidence: 99%

Design optimization of micromachined ferroelectric-based phase shifter using modified ground coplanar waveguide

Paul

Vinoy

2005

Microw. Opt. Technol. Lett.

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Section: Effect Of Spiral Slots In the Cpw Groundmentioning

confidence: 99%

Design optimization of micromachined ferroelectric-based phase shifter using modified ground coplanar waveguide

Paul

Vinoy

2005

Microw. Opt. Technol. Lett.

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“…1, active inductors usually adopt the Gyrator-C structure [2][3][4], using CMOS transistors to achieve the spiral inductor function. The advantages of this structure include easy tuning of inductance with high quality factor (Q) and occupying less chip area than conventional spiral inductors.…”

Section: A Current-controled Active Inductormentioning

confidence: 99%

Design of Multi-standard Low Noise Amplifier based on Active Inductor

Wang¹,

Liang²,

Zhao³

et al. 2013

Proceedings of the 2nd International Conference on Computer Science and Electronics Engineering (ICCSEE 2013)

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Abstract-A current-controlled multi-standard low-noise amplifier (LNA) has been proposed based on the active inductor. The novel folded-cascode circuit topology with feedback resistance ensures good quality factor and linearity of the active inductor. The current-controlled inductance makes the LNA work well with various wireless communication standards such as TD-SCDMA, CDMA2000, WCDMA and Bluetooth. Simulation results indicate that the multi-standard LNA designed using 0.18 μm CMOS technology has a high gain (>11.6 dB), low noise figure (<1.851 dB), good input impedance matching (<-54.01 dB) and stable output impedance matching (<-26.78 dB).

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“…The negative resistance, realized in this design, is dependent on the frequency of operation. To realize a frequency-independent negative resistance that provides high-Q values for a wider band, a new configuration proposed in reference [41,42] is used. Here, unlike GaAs FET used in reference [41], SiGe:C-HBTs are utilized for the inductor design.…”

Section: Introductionmentioning

confidence: 99%

“…To realize a frequency-independent negative resistance that provides high-Q values for a wider band, a new configuration proposed in reference [41,42] is used. Here, unlike GaAs FET used in reference [41], SiGe:C-HBTs are utilized for the inductor design. Then, the negative resistance feedback philosophy is extended from grounded oneport active inductor to floating two-port active inductor to achieve high-Q values necessary in the RF range, using both SiGe and SiGe:C BiCMOS technologies.…”

Section: Introductionmentioning

confidence: 99%

Design of active inductors in SiGe/SiGe:C processes for RF applications

Chakravorty

Scholz

Senapati

et al. 2007

Int J RF and Microwave Comp Aid Eng

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Applicability of silicon-based heterojunction bipolar processes is investigated for designing active inductors with high quality factors (Q). Results for grounded type oneport active inductor incorporating frequency-dependent as well as frequency-independent negative resistances are examined. Later, the negative resistance aspect is extended from one-port to two-port active inductor circuit to ensure its use as a series element. The enhanced Q-values of all the inductive circuits are observed in accordance with the theory. Moderately high-Q values (∼100) with considerable inductances (∼0.2-1 nH) are obtained in the RF frequency ranges (∼5-9 GHz).

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A high-Q broad-band active inductor and its application to a low-loss analog phase shifter

Cited by 48 publications

References 17 publications

Design optimization of micromachined ferroelectric-based phase shifter using modified ground coplanar waveguide

Design optimization of micromachined ferroelectric-based phase shifter using modified ground coplanar waveguide

Design of Multi-standard Low Noise Amplifier based on Active Inductor

Design of active inductors in SiGe/SiGe:C processes for RF applications

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