1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers
DOI: 10.1109/vtsa.1991.246713
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A high quality stacked thermal/LPCVD gate oxide for ULSI

R. Moazzami1,
Chia Wei Hu2
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Cited by 2 publications
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A comparison of CVD stacked gate oxide and thermal gate oxide for 0.5- mu m transistors subjected to process-induced damage

Tseng
1
,
Tobin
2
,
Hayden
3
et al. 1993
IEEE Trans. Electron Devices
11
0
3
0
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A comparison of CVD stacked gate oxide and thermal gate oxide for 0.5- mu m transistors subjected to process-induced damage

Tseng
1
,
Tobin
2
,
Hayden
3
et al. 1993
IEEE Trans. Electron Devices
11
0
3
0
View full textAdd to dashboardCite

Stress-induced current in thin silicon dioxide films

Moazzami
1
,
Hu
2
1992
International Technical Digest on Electron Devices Meeting
183
2
69
0
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