A high sensitive chemiresistive-biosensor based on self-assembly grown GaN porous layer

Zhou, Jialing; Huang, Hui; Chen, Shunji; Wang, Mengyuan; Zhao, Danna; Yu, Jun; Jin, Senlin; Zhong, Yuan; Chen, Xiaoming; Yu, Xiaocai; Liu, Pengbo; Zhao, Jian

doi:10.1016/j.snb.2021.130360

Cited by 13 publications

(10 citation statements)

References 72 publications

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“…The growth mechanism of Pc-GaN was based on noncatalytic film growth and this has been reported and discussed by our previous studies. 19,20 It can be found that the GMP sample features larger surface area compared with Pc-GaN due to the upper array of micropillar. For comparison, samples of the Au layer and GaN-L were also fabricated; their surface morphology was flat as shown in Figure S1.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg²⁺ Detection in Human Urine

Zhou,

Huang,

Wang

et al. 2024

Anal. Chem.

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Owing to the separation of field-effect transistor (FET) devices from sensing environments, extended-gate FET (EGFET) biosensor features high stability and low cost. Herein, a highly sensitive EGFET biosensor based on a GaN micropillar array and polycrystalline layer (GMP) was fabricated, which was prepared by using simple one-step low-temperature MOCVD growth. In order to improve the sensitivity and detection limit of EGFET biosensor, the surface area and the electrical conductivity of extended-gate electrode can be increased by the micropillar array and the polycrystalline layer, respectively. The designed GMP-EGFET biosensor was modified with L-cysteine and applied for Hg 2+ detection with a low limit of detection (LOD) of 1 ng/L, a high sensitivity of −16.3 mV/lg(μg/L) and a wide linear range (1 ng/L-24.5 μg/L). In addition, the detection of Hg 2+ in human urine was realized with an LOD of 10 ng/L, which was more than 30 times lower than that of reported sensors. To our knowledge, it is the first time that GMP was used as extended-gate of EGFET biosensor.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg²⁺ Detection in Human Urine

Zhou,

Huang,

Wang

et al. 2024

Anal. Chem.

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“…The unintentionally-doped GaN film (5 mm) epitaxially grown on a sapphire substrate was etched into the porous structure using a simple photoelectrochemical wet etching method, [23][24][25][26] as schematically illustrated in Fig. 1a.…”

Section: Resultsmentioning

confidence: 99%

A porous GaN/MoO₃ heterojunction for filter-free, ultra-narrowband ultraviolet photodetection

et al. 2022

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“…It has been reported that the formation of covalent bonds 1.13 × 10 −13 M for R6G [98] with cysteamine (β-Cys) after self-grown NP-GaN is plated with nickel-gold layers. Quantitative relationship of physical properties such as density and resistance is provided [107].…”

Section: Gas and Photoelectric Sensormentioning

confidence: 99%

The development and applications of nanoporous gallium nitride in optoelectronics: a review

Ying

Liang

Guo

et al. 2023

Semicond. Sci. Technol.

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The development of nanoporous gallium nitride has widened the material properties and applications in third generation semiconductor area. Nanoporous gallium nitride has been used in laser emitters, light-emitting diodes, optical sensors, and optical energy storage devices. In this paper, we reviewed the most recent progress in the nanoporous GaN field by electrochemical etching. The properties of etched GaN have many superior properties compared with original GaN templates, such as stronger photoluminescence intensity, thermal conductivity, piezo-electricity, more accessible area, stress relief and refractive index. These advantages will make GaN more widely used in the field of optics and optoelectronics. Pore formation can be controlled by adjusting the applied potential and etching time. The nanoporous GaN makes the material of GaN have broader application prospects. We introduced in detail the application prospects of different GaN based processes and subsequent application methods in optoelectronics, sensors, and materials themselves. This review will help to improve further development of nanoporous GaN applications.

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A high sensitive chemiresistive-biosensor based on self-assembly grown GaN porous layer

Cited by 13 publications

References 72 publications

Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg²⁺ Detection in Human Urine

Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg²⁺ Detection in Human Urine

A porous GaN/MoO₃ heterojunction for filter-free, ultra-narrowband ultraviolet photodetection

The development and applications of nanoporous gallium nitride in optoelectronics: a review

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A high sensitive chemiresistive-biosensor based on self-assembly grown GaN porous layer

Cited by 13 publications

References 72 publications

Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg2+ Detection in Human Urine

Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg2+ Detection in Human Urine

A porous GaN/MoO3 heterojunction for filter-free, ultra-narrowband ultraviolet photodetection

The development and applications of nanoporous gallium nitride in optoelectronics: a review

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Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg²⁺ Detection in Human Urine

Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg²⁺ Detection in Human Urine

A porous GaN/MoO₃ heterojunction for filter-free, ultra-narrowband ultraviolet photodetection