A high-speed 0.35μm CMOS optical communication link

Goosen, Marius E.; Venter, Petrus J.; Plessis, Monuko du; Bogalecki, Alfons W.; Alberts, Antonie C.; Rademeyer, P.

doi:10.1117/12.907945

Cited by 2 publications

(2 citation statements)

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“…Hot carrier luminescence seen from avalanching junctions is known to be extremely fast [17], [18] which means that the limit to the rate at which the pixels can be toggled is limited by other factors such as the electronics and architecture itself. Since the planarity of CMOS burdens the pixel designer to aim for the simplest and smallest driver circuit in order to maximize the fill factor, no memory element is integrated into the pixel.…”

Section: B Addressing Schemementioning

confidence: 99%

A 128<formula formulatype="inline"><tex Notation="TeX">$\times$</tex> </formula>96 Pixel CMOS Microdisplay Utilizing Hot Carrier Electroluminescence From Junctions in Reach Through

Venter

Plessis

2014

J. Display Technol.

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Visible light from silicon junctions under avalanche breakdown can be used to create microdisplay systems with integrated light sources. Junctions available in standard CMOS usually breaks down at much larger voltages than the typical operating voltage for integrated circuitry. It is possible to reduce the operating voltage of by making use of techniques which changes the electric field profile in light sources based on hot carrier electroluminescence such as electric field reach through between two highly doped implant regions. This work successfully demonstrates the possibility of tailoring the operating voltage and quantifying the optical performance in an integrated microdisplay consisting of a 128 by 96 pixel array based on light sources in standard CMOS. Based on the approach followed it becomes possible to integrate light sources in such a manner that it can coexist and interact with other on-chip analog and digital circuitry. The requirements for architectural features of a microdisplay in standard CMOS is discussed and it is shown to be possible to create large scale integrated circuits containing integrated light sources in standard CMOS without the need for postprocessing or additional back end modifications.

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Section: B Addressing Schemementioning

confidence: 99%

A 128<formula formulatype="inline"><tex Notation="TeX">$\times$</tex> </formula>96 Pixel CMOS Microdisplay Utilizing Hot Carrier Electroluminescence From Junctions in Reach Through

Venter

Plessis

2014

J. Display Technol.

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“…In particular, we pursue the monolithic integration of an optocoupler: a photonic data connection with electronic input and output (see e.g. [11]). An optocoupler consists of an electrically modulated light source, a light waveguide, and a photodetector.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and properties of GeSi and SiON layers for above-IC integrated optics

Schmitz

Rangarajan

Kovalgin

2015

Solid-State Electronics

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a b s t r a c tA study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-in diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photo detection up to $1500 nm wavelength. An investigation of the process window for laser crystallization is presented aiming toward the localization control of crystal boundaries and the achievement of crystals larger than 2 lm. Further, an inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150°C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS using these materials are discussed.

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A high-speed 0.35μm CMOS optical communication link

Cited by 2 publications

References 0 publications

A 128<formula formulatype="inline"><tex Notation="TeX">$\times$</tex> </formula>96 Pixel CMOS Microdisplay Utilizing Hot Carrier Electroluminescence From Junctions in Reach Through

A 128<formula formulatype="inline"><tex Notation="TeX">$\times$</tex> </formula>96 Pixel CMOS Microdisplay Utilizing Hot Carrier Electroluminescence From Junctions in Reach Through

Fabrication and properties of GeSi and SiON layers for above-IC integrated optics

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