A highly efficient linearized wide-band CDMA handset power amplifier based on predistortion under various bias conditions

Hau, Gary; Nishimura, T.B.; Iwata, N.

doi:10.1109/22.925522

Cited by 64 publications

(34 citation statements)

References 19 publications

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“…Alternatively thereafter the APD is realized in on chip solution with an aid of hetero-junction FET technology [17]. An opposite phase response is obtained by varying the biasing port of the FET.…”

Section: Analog Pre-distortion Linearization (Apd)mentioning

confidence: 99%

Energy saving power amplifier design methodologies for mobile wireless communications

Eswaran

Ramiah

Kanesan

et al. 2015

Renewable and Sustainable Energy Reviews

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Section: Analog Pre-distortion Linearization (Apd)mentioning

confidence: 99%

Energy saving power amplifier design methodologies for mobile wireless communications

Eswaran

Ramiah

Kanesan

et al. 2015

Renewable and Sustainable Energy Reviews

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“…Typically, these predistorters have good IMD cancellation at a fixed output power and their performance rapidly degrades from this point. The acceptable linearized dynamic range, for single diode-based predistorters, should be less than 3 dB [1,2]. Larger dynamic range requirements necessitate an alternative approach.…”

Section: Introductionmentioning

confidence: 99%

“…Due to their higher current drive, and lower parasitic source and drain resistance as compared to bulk silicon MOSFETs, SOI circuits offer excellent high-frequency performance [1]. The high unity-gain frequency of SOI MOSFETs have made them increasingly attractive for applications in integrated high-frequency analog electronics and wireless communication [2]. However, for RF-integrated circuits, low-noise performance is very important [3].…”

Section: Introductionmentioning

confidence: 99%

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RF curve‐fitting predistorter for extending the dynamic range of a linearized power amplifier

Cho

Jang

Kim

et al. 2003

Micro & Optical Tech Letters

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while (38) implies that ␤ 2 Ͼ 0 since the term in the square bracket can be shown to be always nonnegative. Upon dropping the denominator and taking the square root, we arrive atTo prove in the opposite direction, one can simply interchange the indexes in the foregoing symmetrical procedure. These same steps are also applicable for showing the mutual implications in the input and output planes. Hence, it has been explicitly justified that (31) N (32) and (33) N (34). The justifications above have also proved 1 Ͼ 1 N 2 Ͼ 1 in a concise and clear-cut manner. CONCLUSIONThis paper has presented a simple derivation of the single-parameter geometrical stability criteria for linear two-ports. The derivation has been carried out based on the classical constraints familiar to most circuit designers with regard to stability circles and stable regions. It has been shown that the combination of one geometrical constraint on the stability circle in the source, load, input plane, or output plane, together with one auxiliary condition, allows one to deduce the geometrical stability parameters directly. A straightforward proof of the mutual implications of various geometrical stability criteria, including the dual geometrical and auxiliary conditions as well as the single-parameter geometrical conditions, has also been provided in a concise and explicit manner. A piecewise curve-fitting predistorter for a given power amplifier transfer characteristic has been reported in [5,6]. One approach uses a nonmonotonic function generator and consists of a combination of operational amplifiers and resistors [5], however, this approach is not viable for RF applications. Another approach consists of an independent amplitude and phase predistorter [6]. The main disadvantage of this predistorter is its complexity.We propose an RF curve-fitting predistorter which uses a reflection-type diode based on the amplitude modulation to amplitude modulation (AM-AM) and amplitude modulation to phase modulation (AM-PM) transfer function characteristics in order to extend the linearized dynamic range of the power amplifier. The advantages of the proposed predistorter are its simplicity and stable configuration, using shunt diodes instead of series diodes. OPERATION PRINCIPLE OF RF CURVE-FITTING PREDISTORTERThe curve-fitting predistorter uses a single diode, as shown in Figure 1(a), to approximate one segment of the predistortion transfer characteristic and achieve IMD cancellation at a fixed point [see Fig. 1(c)]. The transfer function characteristic of the predistorter can be closely matched by the selection of a sufficient number of diodes [ Fig. 1(b)]. However, increasing the number of diodes gives rise to higher insertion loss and greater complexity of parameter adjustment. The linearized dynamic range can be extended by more than 10 dB using a three-diode predistorter, as shown in Figure 1(c). Figure 2 shows a block diagram and equivalent circuit of the proposed RF curve-fitting predistorter. It consists of a -type attenuator for input/output match...

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“…Predistortion linearizers [7][8][9][10][11][12][13][14][15][16] are widely used in linearizing the PAs due to, their wide bandwidth, ease of use and their ability to be appended to existing amplifiers as a separate stand-alone module. The predistortion linearizers, in fact, introduce equal and opposite gain and phase distortion at the input of the PA to correct for the actual encountered distortion in the gain and phase characteristics of the final output.…”

Section: Introductionmentioning

confidence: 99%

A Flexible Dual-Inflection Point Rf Predistortion Linearizer for Microwave Power Amplifiers

Hashmi¹,

Rogojan²,

Ghannouchi³

2010

PIER C

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Abstract-This paper presents a very flexible and generic design of a diode-based RF predistortion linearizer that can correct for the dualinflection point type compression characteristics found in the gain profile of metal semiconductor field effect transistor (MESFET) based and Doherty power amplifiers. It consists of a circuit configuration that has the head-tail configuration of Schottky diodes, complemented with a p-intrinsic-n (PIN) diode in parallel, at two ports of a 90 • hybrid coupler for improving the performance of the linearizer. The use of a PIN diode in the linearizer provides it with an extra level of freedom in achieving the desired characteristic. Overall, the linearizer is equipped with three degrees of freedom and hence possesses the capability to achieve output characteristics that can be employed in linearizing various types of power amplifiers. The proposed linearizer has been shown to simultaneously improve the third-and fifthorder intermodulation distortions of a commercial ZHL-4240 gallium arsenide field effect transistor (GaAs FET) based power amplifier over a 10 dB power range.

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A highly efficient linearized wide-band CDMA handset power amplifier based on predistortion under various bias conditions

Cited by 64 publications

References 19 publications

Energy saving power amplifier design methodologies for mobile wireless communications

Energy saving power amplifier design methodologies for mobile wireless communications

RF curve‐fitting predistorter for extending the dynamic range of a linearized power amplifier

A Flexible Dual-Inflection Point Rf Predistortion Linearizer for Microwave Power Amplifiers

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