A history of the invention of the transistor and where it will lead us

Brinkman, W. F.; Haggan, D.E.; Troutman, W.W.

doi:10.1109/4.643644

Cited by 137 publications

(72 citation statements)

References 8 publications

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“…It has been many decades since the vacuum tubes have been replaced by solid-state devices such as the metal-oxide-semiconductor field-effect transistor (MOSFET) and diode. 1 Nevertheless, the vacuum tubes are still used in niche applications such as premier sound systems and high-power radio base stations. 2,3 The transition from the vacuum tube to the solid-state device was not driven by the superiority of the semiconductor as a carrier transport medium but by the ease of fabrication, lowcost, low-power consumption, lightness, long lifetime, and ideal form factor for integrated circuits (ICs).…”

mentioning

confidence: 99%

Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor

Han¹,

Oh²,

Meyyappan³

2012

Applied Physics Letters

222

143

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Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors AIP Advances 2, 022138 (2012) Effects of substrate strain and electrical stress on lattice dynamics, defects, and traps in strainedSi/Si0.81Ge0.19n-type metal-oxide-semiconductor field effect transistors J. Appl. Phys. 111, 104507 (2012) Threshold voltage shift and drain current degradation by negative bias temperature instability in Si (110) pchannel metal-oxide-semiconductor field-effect transistor Appl. Phys. Lett. 100, 212109 (2012) High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes Appl. Phys. Lett. 100, 213507 (2012) Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment

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mentioning

confidence: 99%

Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor

Han¹,

Oh²,

Meyyappan³

2012

Applied Physics Letters

222

143

View full text Add to dashboard Cite

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“…Bell also stimulated universities to develop this knowledge [Brinkman et al, 1997]. Resources are lacking affecting the availability of the product or complementary products and services.…”

Section: Educate Niche Strategymentioning

confidence: 99%

Ten niche strategies to commercialize new high-tech products

Ortt

Langley

Pals

2013

2013 International Conference on Engineering, Technology and Innovation (ICE) &Amp; IEEE International Technology Management Co

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There are serious gaps in the scientific literature relating to niche strategies as a means for commercializing new high-tech products. In particular, there is no clarity about what types of niche strategies can be distinguished, or how a niche strategy can be selected to suit a certain situation. In this paper, we identify generic actors, factors and functions that play a role in the commercialization of high-tech products, and that can form barriers to large-scale diffusion, thereby necessitating the implementation of a niche strategy. We analyse thirty-six different market situations and assess historical cases to identify the niche strategies that emerged. We find ten generic niche strategies, each of which can be applied in a number of situations. We present a model to aid managers in purposefully selecting an appropriate niche strategy.

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“…For the extraction of the P-MOS threshold voltage, the voltage between drain and source was -100 mV. We varied the voltage between gate and source of -0.1 to -5.1 V. The method for determining the threshold voltage was the second derivative of I D x V GS curve [5,6].…”

Section: Radiation Effect Mechanisms In Electronic Devicesmentioning

confidence: 99%

Radiation Effect Mechanisms in Electronic Devices

Silveira¹

2014

Proceedings of 10th Latin American Symposium on Nuclear Physics and Applications — PoS(X LASNPA)

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In this work, P-and N-MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) were submitted to X-ray and ion beams. CD 4007, a commercial off-the-shelf integrated circuit composed of six transistors, three P-type and three N-type, in a single package, was used. The integrated circuits were exposed to 60 MeV 35 Cl ion beams using the São Paulo 8UD Pelletron Accelerator and 10 keV X-ray radiation, using a Shimadzu XRD-7000 X-ray diffractometer. The total dose effects due to ionizing radiation in MOSFET were analyzed. The results indicate V th depends on the absorbed dose and dose rate. The deviation of V th is higher for P-MOS, while the change in slope is higher for N-MOS. TID (Total Ionizing Dose) caused by heavy ion does not seem to affect mobility. After heat treatment, the device establishes a different equilibrium state compared to that achieved at room temperature. The heat treatment worsens the P-type characteristics and improves the N-type.

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A history of the invention of the transistor and where it will lead us

Cited by 137 publications

References 8 publications

Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor

Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor

Ten niche strategies to commercialize new high-tech products

Radiation Effect Mechanisms in Electronic Devices

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