A hybridized graphene carrier highway for enhanced thermoelectric power generation

Hong, Seung‐Hyun; Kim, Eun Sung; Kim, Wonyoung; Jeon, Seong-Jae; Lim, Seong Chu; Kim, Ki Hong; Lee, Hoo-Jeong; Hyun, Seungmin; Kim, Duckjong; Choi, Jae‐Young; Lee, Young Hee; Baik, Seunghyun

doi:10.1039/c2cp42936e

Cited by 24 publications

(49 citation statements)

References 44 publications

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“…Additionally, the Seebeck coefficient and power factor of FLG could be enhanced at high temperature (>500 K) by molecular attachments and oxygen plasma treatment, attributed to the band gap opening. By constructing the c‐axis preferentially oriented nanoscale Sb 2 Te 3 film on monolayer graphene, both S and σ were increased, benefiting from a highway for carriers provided by graphene . From a practical point of view, Hewitt et al focused on maximizing the power output of FLG/polyvinylidene fluoride composite thin films by considering the absolute temperature, temperature gradient, load resistance, and physical dimensions of films.…”

Section: Thermoelectric Properties Of Graphenementioning

confidence: 99%

Thermal and Thermoelectric Properties of Graphene

Duan

2014

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The subject of thermal transport at the mesoscopic scale and in low-dimensional systems is interesting for both fundamental research and practical applications. As the first example of truly two-dimensional materials, graphene has exceptionally high thermal conductivity, and thus provides an ideal platform for the research. Here we review recent studies on thermal and thermoelectric properties of graphene, with an emphasis on experimental progresses. A general physical picture based on the Landauer transport formalism is introduced to understand underlying mechanisms. We show that the superior thermal conductivity of graphene is contributed not only by large ballistic thermal conductance but also by very long phonon mean free path (MFP). The long phonon MFP, explained by the low-dimensional nature and high sample purity of graphene, results in important isotope effects and size effects on thermal conduction. In terms of various scattering mechanisms in graphene, several approaches are suggested to control thermal conductivity. Among them, introducing rough boundaries and weakly-coupled interfaces are promising ways to suppress thermal conduction effectively. We also discuss the Seebeck effect of graphene. Graphene itself might not be a good thermoelectric material. However, the concepts developed by graphene research might be applied to improve thermoelectric performance of other materials.

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Section: Thermoelectric Properties Of Graphenementioning

confidence: 99%

Thermal and Thermoelectric Properties of Graphene

Duan

2014

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267

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“…For commercialization of highly oriented thin film structured thermoelectric devices, cheap and large‐size substrates are essential. Among the alternative substrates for low cost chalcogenide thin film process, graphene began to attract considerable attention due to its high chemical stability, microstructural periodicity, and high electrical conductivity . Moreover, graphene substrates can provide energetically favourable adsorption sites during BT and ST deposition process with minimized lattice mismatch between thin film and substrate.…”

Section: Introductionmentioning

confidence: 99%

Growth behavior of Bi₂Te₃and Sb₂Te₃thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Lee

Kim

Kang

et al. 2017

Phys. Status Solidi RRL

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A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2Te3 and Sb2Te3 thin films was carried out. Obvious microstructural discrepancy in both the as‐deposited Bi2Te3 and Sb2Te3 thin films was observed when grown on graphene or SiO2/Si substrate. Bi2Te3 and Sb2Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c‐axis and show very smooth surface compared to that on SiO2/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.

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“…However, for commercialization of high performance thin film thermoelectric devices, inexpensive and large‐size substrates are essential. For this reason, graphene began to attract considerable attention as an alternative substrate due to its high chemical stability, microstructural periodicity, and high electrical conductivity . Moreover, graphene substrate has small lattice mismatch with BT and ST.…”

mentioning

confidence: 99%

Improvement of thermoelectric properties of Bi₂Te₃ and Sb₂Te₃ films grown on graphene substrate

Lee

Kim

Choi

et al. 2017

Physica Rapid Research Ltrs

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Phone: þ82 42 860 7677, Fax: þ82 42 861 4151A study of substrate effect on the thermoelectric (TE) properties of Bi 2 Te 3 (BT) and Sb 2 Te 3 (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO 2 /Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films.Thermoelectric (TE) energy generators have promising applications in the operation of micro-scale electric devices and systems. Many previous researches have been focused on the enhancement of the efficiency of TE materials [1][2][3][4][5][6][7][8]. The efficiency of thermoelectric materials depends on the dimensionless thermoelectric figure of merit ZT ¼ a 2 sT/k where a, T, s, and k are the Seebeck coefficient, absolute temperature, electrical conductivity, and thermal conductivity, respectively. The recent reports explained that the enhancement of ZT was mainly due to the reduction of k by nanostructure-engineering which dramatically increases phonon boundary scattering at interfaces [1,2,[5][6][7]. However, the enhancement of ZT by increasing the thermoelectric power factor (a 2 s) has been reported [9][10][11][12].Various deposition methods have been reported for preparation of highly oriented Bi 2 Te 3 (BT) and Sb 2 Te 3 (ST) thin films, such as molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD) [13][14][15]. MOCVD has attracted the most amount of attention due to its low cost and high controllability for thin film growth, which make it most suitable for large-scale production. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD) has an advantage of low deposition temperature with a relatively high deposition rate in comparison with conventional MOCVD process.It is well known that the electrical conductivity of BT and ST along c-plane is much higher than that of c-axis because of the layered structural characteristics of single crystalline BT and ST [16,17]. Furthermore, epitaxial BT and ST thin films are also expected to have higher power factors than that of polycrystalline. However, latticematched substrate for BT and ST has rarely been reported until now except expensive yet small-sized crystalline

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A hybridized graphene carrier highway for enhanced thermoelectric power generation

Cited by 24 publications

References 44 publications

Thermal and Thermoelectric Properties of Graphene

Thermal and Thermoelectric Properties of Graphene

Growth behavior of Bi₂Te₃and Sb₂Te₃thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Improvement of thermoelectric properties of Bi₂Te₃ and Sb₂Te₃ films grown on graphene substrate

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A hybridized graphene carrier highway for enhanced thermoelectric power generation

Cited by 24 publications

References 44 publications

Thermal and Thermoelectric Properties of Graphene

Thermal and Thermoelectric Properties of Graphene

Growth behavior of Bi2Te3and Sb2Te3thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Improvement of thermoelectric properties of Bi2Te3 and Sb2Te3 films grown on graphene substrate

Contact Info

Product

Resources

About

Growth behavior of Bi₂Te₃and Sb₂Te₃thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Improvement of thermoelectric properties of Bi₂Te₃ and Sb₂Te₃ films grown on graphene substrate