2017
DOI: 10.1587/elex.14.20170350
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A Ka-band TDD front-end chip with 24.7% bandwidth and temperature compensation technology

Abstract: This paper presents a compact Ka-band TDD front-end chip with temperature compensation technology. The front-end chip is integrated with a passive switch, a low noise amplifier (LNA) and a power amplifier (PA). Temperature compensation bias network is used to reduce the gain ripple versus temperature, and co-design method between the amplifiers and the switch is used to enhance the bandwidth. The gain ripple is less than ²0.7 dB when the temperature ranges from −55°C to +85°C. The circuit works from 30.5 GHz∼3… Show more

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Cited by 5 publications
(3 citation statements)
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“…The solved output impedance R o of this temperature compensation bias circuit can be expressed as in Equation ( 15) from Equations ( 11) to (14). Compared with the traditional passive bias temperature compensation network, which adjusts the gate voltage of the transistor through the series voltage divider of the resistor [27], the output impedance of the bias network is adjusted by changing the bias state of M1 and the reasonable resistance value. By reducing the output impedance of the temperature compensation circuit, the load capacity of the circuit is increased, and the influence of the impedance change of the main circuit on the power supply is reduced.…”
Section: Temperature Compensation Bias Circuitmentioning
confidence: 99%
“…The solved output impedance R o of this temperature compensation bias circuit can be expressed as in Equation ( 15) from Equations ( 11) to (14). Compared with the traditional passive bias temperature compensation network, which adjusts the gate voltage of the transistor through the series voltage divider of the resistor [27], the output impedance of the bias network is adjusted by changing the bias state of M1 and the reasonable resistance value. By reducing the output impedance of the temperature compensation circuit, the load capacity of the circuit is increased, and the influence of the impedance change of the main circuit on the power supply is reduced.…”
Section: Temperature Compensation Bias Circuitmentioning
confidence: 99%
“…The biasing network generates the transistors' gate biasing voltage in each chip, which varies versus temperature to compensate the performance changing [1]. The biasing network consists a R Mesa and a R TFR as shown in Fig.…”
Section: Temperature Compensated Biasing Networkmentioning
confidence: 99%
“…It is difficult to find a wide spectrum for the high-speed communication or radar application. Microwave and millimeter-wave bands are attractive because of the large absolute bandwidth [1,2]. Ka-band is suitable for many applications, such as satellite communications and phased array radar, and is a promising band for the upcoming 5G communication [3].…”
Section: Introductionmentioning
confidence: 99%