A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application

Mitani, Eizo; Makoto, Aojima; Sano, S.

doi:10.1109/emicc.2007.4412677

Cited by 49 publications

(33 citation statements)

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“…Its large bandgap, high breakdown field, high electron mobility and its ability to form heterojunctions in the (In, Al, Ga)N materials matrix are its attractive properties in comparison to conventional gallium arsenide pseudomorphic-HEMTs. In the last decade, outstanding performance has been demonstrated with AlGaN/GaN HEMTs [1,2], yielding in the highest microwave power handling capability of all solid state device configurations up to now.…”

Section: Introductionmentioning

confidence: 99%

Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub¹,

Carlin²,

Gaquière³

et al. 2008

TOEEJ

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Abstract:The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.

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Section: Introductionmentioning

confidence: 99%

Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub¹,

Carlin²,

Gaquière³

et al. 2008

TOEEJ

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“…Current HPAs include the L-band 500 W [1] and S-band 800 W [2], but HPAs with output powers of more than 100 W have been reported even in the high frequency bands (C-, X-and Ku-bands) [3,4]. A power added efficiency (PAE) of 80% is achieved for output power of 16.5 W [5].…”

Section: Introductionmentioning

confidence: 99%

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

Nakatani¹,

Ishizaki²

2015

Journal of electromagnetic engineering and science

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The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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“…For the power aspect, a record power density of 9.8 W/mm at 8 GHz for an AlGaN/GaN HEMT device grown on a SiC substrate was demonstrated in 2001, which is about 10 times higher than GaAs-based HEMTs [8]. And state-of-the-art power levels have continued being pushed higher, to total output powers of 800 W at 2.9 GHz and over 500 W at 3.5 GHz for instance [9][10]. For the frequency aspect, the focus has been put on the scaling technology in device fabrications together with novel ultra-thin-barrier heterostructure designs enabled by AlN and InAlN materials [11] [12], and the state-ofthe-art cut-off frequency has already exceeded 450 GHz in GaN HEMT devices [13].…”

Section: Pappermentioning

confidence: 99%

MOCVD growth of GaN-based high electron mobility transistor structures

Chen¹

2015

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IICover: surface morphology of a GaN high electron mobility transistor structure grown on a native GaN substrate. The image was obtained with an atomic force microscope. AbstractWide bandgap group-III nitride semiconductors like GaN, AlN, and their alloys are very suitable for the use in high-power, high-frequency electronics, as a result of their superior intrinsic properties. The polarization-induced high-density and high-mobility two-dimensional electron gas (2DEG) forming in (0001) oriented AlGaN/GaN heterostructures enable the epitaxial structure to be utilized for high electron mobility transistors (HEMTs). Outstanding power handling and record high frequency have been demonstrated from GaN-based HEMT devices over time. However, the shortterm stability and the long-term reliability of the device performances remain problematic. In order to make GaN HEMT technology truly take off and breach the civilian market like automotive, telecommunication applications, the problems need to be solved to justify its relatively high cost over the solutions based on Si and GaAs technologies.At the material level, there are two major challenges; one is the reduction of highdensity structural defects in heteroepitaxially grown layers when foreign substrates are used, and the other is the control of "deep" electron traps forming in the middle of the "wide" bandgap by intrinsic defects or extrinsic impurities.The main idea of the present work was therefore to tackle these material issues directly, using an approach called bottom-to-top optimization to improve the overall quality of GaN-based HEMT epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. Great effort was put to gain the understanding of the influence of growth parameters on material properties and consequently to establish an advanced and reproducible growth process. Many state-of-the-art material properties of GaNbased HEMT structures were achieved in this work, including superior structural integrity of AlN nucleation layers for ultra-low thermal boundary resistance, excellent control of residual impurities, outstanding and nearly-perfect crystalline quality of GaN epilayers grown on SiC and native GaN substrates, respectively, and record-high room temperature 2DEG mobility obtained in simple AlGaN/GaN heterostructures.The epitaxial growth of the wide bandgap III-nitride epilayers like GaN, AlN, AlGaN, and InAlN, as well as various GaN-based HEMT structures was all carried out in a hot-wall metalorganic chemical vapor deposition (MOCVD) system. A variety of structural and electrical characterizations were routinely used to provide fast feedback VI for adjusting growth parameters and developing improved growth processes, such as optical microscopy (OM), atomic force microscopy (AFM), x-ray diffraction (XRD), capacitance-voltage measurement (CV) as well as sheet resistance...

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A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application

Cited by 49 publications

References 1 publication

Status of the Emerging InAlN/GaN Power HEMT Technology

Status of the Emerging InAlN/GaN Power HEMT Technology

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

MOCVD growth of GaN-based high electron mobility transistor structures

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