A lensless contact-type image sensor based on a CdSe photoconductive array

Capon, J.; Baets, Johan De; Rycke, I. De; Smet, Herbert De; Doutreloigne, Jan; Calster, André Van; Vanfleteren, Jan

doi:10.1016/0924-4247(93)80094-w

Cited by 7 publications

(5 citation statements)

References 4 publications

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“…For single-crystalline CdSe nanowires, Wang et al reported a photodetector showing rise and decay time constants of 34 and 230 μs, respectively. Other reports on single-crystal CdSe nanowires show responses times at the millisecond scale. − For other CdSe nanostructures, such as nanobelts, shorter response times have been achieved with a minimal value of 15 μs and high gain (∼10 2 –10 3 ). , Table S1 summarizes those and other − reported values for comparison with our results.…”

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confidence: 67%

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Guided CdSe Nanowires Parallelly Integrated into Fast Visible-Range Photodetectors

et al. 2017

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One-dimensional semiconductor nanostructures, such as nanowires (NWs), have attracted tremendous attention due to their unique properties and potential applications in nanoelectronics, nano-optoelectronics, and sensors. One of the challenges toward their integration into practical devices is their large-scale controlled assembly. Here, we report the guided growth of horizontal CdSe nanowires on five different planes of sapphire. The growth direction and crystallographic orientation are controlled by the epitaxial relationship with the substrate as well as by a graphoepitaxial effect of surface nanosteps and grooves. CdSe is a promising direct-bandgap II–VI semiconductor active in the visible range, with potential applications in optoelectronics. The guided CdSe nanowires were found to have a wurtzite single-crystal structure. Field-effect transistors and photodetectors were fabricated to examine the nanowire electronic and optoelectronic properties, respectively. The latter exhibited the fastest rise and fall times ever reported for CdSe nanostructures as well as a relatively high gain, both features being essential for optoelectronic applications.

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confidence: 67%

“… 28 − 30 For other CdSe nanostructures, such as nanobelts, shorter response times have been achieved with a minimal value of 15 μs and high gain (∼10 2 –10 3 ). 5 , 31 Table S1 summarizes those and other 32 − 36 reported values for comparison with our results.…”

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confidence: 59%

Guided CdSe Nanowires Parallelly Integrated into Fast Visible-Range Photodetectors

et al. 2017

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“…The 3 dB bandwidth of the photoconductor, f 3dB , is inversely proportional to τ eff : f 3 dB = 1 2 π τ eff Equation predicts that the low values of τ eff that are characteristic of polycrystalline materials correlates with a more rapid photoconductivity response and recovery. Commensurate with this expectation, fast (microsecond to picosecond) photoconductors based upon pc -CdSe and pc -CdTe films have been reported. − The response and recovery times for photoconductivity in these microscopic films are considerably faster than most single crystalline nanowires, nanorods, etc. (Table ).…”

Section: Introductionmentioning

confidence: 79%

Electrodeposited Nanophotonics

Penner

2014

J. Phys. Chem. C

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Prior work involving the detection and emission of light from semiconductor nanostructures has involved single crystalline nanomaterials. Here we review the use of electrodeposited, polycrystalline (pc), cadmium selenide (CdSe) in nanowires and nanogap device structures for photonics. The photodetectors and photon emitters we describe are symmetrical metal–semiconductor–metal (M-S-M) devices prepared either by the evaporation of two gold contacts onto linear arrays of pc-CdSe nanowires prepared using lithographically patterned nanowires electrodeposition (LPNE), or by the electrodeposition of pc-CdSe directly onto gold nanogaps. The properties of these devices for detecting light using photoconductivity, and for generating light by electroluminescence, are described.

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“…Polycrystalline CdSe films (Table ) can produce 200−1000 μs response and recovery times , significantly faster, we believe, than any single crystalline nanowires studied to date. Inspired by these results, we have sought to synthesize and characterize the photoconductivity of polycrystalline II−VI nanowires.…”

mentioning

confidence: 77%

“…Remarkably, despite their random orientation, these nanowire ensembles produced a significant polarization anisotropy at polarization modulation frequencies up to 100 Hz in these studies. 28 PolycrystallineCdSefilms(Table1)canproduce200-1000 µs response and recovery times 29,30 significantly faster, we believe, than any single crystalline nanowires studied to date. Inspired by these results, we have sought to synthesize and characterize the photoconductivity of polycrystalline II-VI nanowires.…”

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confidence: 80%

20 μs Photocurrent Response from Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires

et al. 2010

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Lithographically patterned nanowire electrodeposition (LPNE) provides a method for patterning nanowires composed of nanocrystalline cadmium selenide (nc-CdSe) over wafer-scale areas. We assess the properties of (nc-CdSe) nanowires for detecting light as photoconductors. Structural characterization of these nanowires by X-ray diffraction and transmission electron microscopy reveals they are composed of stoichiometric, single phase, cubic CdSe with a mean grain diameter of 10 nm. For nc-CdSe nanowires with lengths of many millimeters, the width and height dimensions could be varied over the range from 60 to 350 nm (w) and 20 to 80 nm (h). Optical absorption and photoluminescence spectra for nc-CdSe nanowires were both dominated by band-edge transitions. The photoconductivity properties of nc-CdSe nanowire arrays containing approximately 350 nanowires were evaluated by electrically isolating 5 microm nanowire lengths using evaporated gold electrodes. Photocurrents, i(photo), of 10-100 x (i(dark)) were observed with a spectral response characterized by an onset at 1.75 eV. i(photo) response and recovery times were virtually identical and in the range from 20 to 40 micros for 60 x 200 nm nanowires.

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A lensless contact-type image sensor based on a CdSe photoconductive array

Cited by 7 publications

References 4 publications

Guided CdSe Nanowires Parallelly Integrated into Fast Visible-Range Photodetectors

Guided CdSe Nanowires Parallelly Integrated into Fast Visible-Range Photodetectors

Electrodeposited Nanophotonics

20 μs Photocurrent Response from Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires

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