I. De Rycke scite author profile

Based on the grain barrier model of Levinson an expression of the off-current Ioff of a thin-film transistor is derived. The dependence of Ioff on the donor concentration N D and the semiconductor thickness d s is discussed and compared to experimental data. It is shown that N Dds has to be smaller than the grain-boundary trap concentration in order to obtain enhancement thin-film transistors completely turned off at Va = O.

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High-voltage polycrystalline CdSe thin-film transistors

Baets¹,

Vanfleteren²,

Rycke³

et al. 1990

IEEE Trans. Electron Devices

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The influence of low copper doping concentrations on the recrystallization process in and the electrical properties of germanium in Ge:Cu thin film transistors

et al. 1990

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A lensless contact-type image sensor based on a CdSe photoconductive array

Capon¹,

Baets²,

Rycke³

et al. 1993

Sensors and Actuators A: Physical

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I. De Rycke

Polycrystalline CdSe films for thin film transistors

On the field effect in polycrystalline CdSe thin-film transistors

High-voltage polycrystalline CdSe thin-film transistors

The influence of low copper doping concentrations on the recrystallization process in and the electrical properties of germanium in Ge:Cu thin film transistors

A lensless contact-type image sensor based on a CdSe photoconductive array

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