A low complexity 0.13 μ SiGe BiCMOS technology for wireless and mixed signal applications

Lanzerotti, L.; Feilchenfeld, N.; Coolbaugh, Douglas; Slinkman, J.; Gray, P.; Sheridan, David C.; Higgins, J.A.; Hodge, W.; Gordon, M.; Larsen, Torben; Gautsch, M.; Lindgren, Peter; Murty, Ramana; Rascoe, J.; Watson, K.; Stamper, T.; Eshun, E.; Jing, He; Downes, K.; Rassel, R.; Greco, J.; Labelle, B.; Sweeney, S.; Stein, K.; Bolam, R.; Vaed, K.; Omer, B.; Joseph, A.J.; Onge, S. St; Dunn, J.

doi:10.1109/bipol.2004.1365789

Cited by 11 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…TO AN ALL-IMPLANTED COLLECTOR Different approaches can be considered to build a low-cost derivative of a SiGe BiCMOS technology, by simplifying either the emitter-base architecture [2] or the collector module [3]- [4]. We have shown that the self-alignment of the emitter-base system is a key advantage to reach state-of-the-art performances [5]- [6].…”

Section: From a Conventional Epitaxial Collectormentioning

confidence: 98%

250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector

Chevalier

Raya

Geynet

et al. 2006

2006 Bipolar/BiCMOS Circuits and Technology Meeting

View full text Add to dashboard Cite

show abstract

Section: From a Conventional Epitaxial Collectormentioning

confidence: 98%

250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector

Chevalier

Raya

Geynet

et al. 2006

2006 Bipolar/BiCMOS Circuits and Technology Meeting

View full text Add to dashboard Cite

show abstract

“…One of them was IBM's SiGe 8 WL technology, which is a cost-performance variant of the 130 nm node high-performance platform technology [10]. IBM 5AM [11], with peak cut-off frequency of 50 GHz, 0.5 SiGe process, was used for gamma irradiation.…”

Section: Devices and Test Conditionsmentioning

confidence: 99%

Re-Examining TID Hardness Assurance Test Protocols for SiGe HBTs

Cheng

Pellish

Carts

et al. 2009

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

We investigate the applicability of current total ionizing dose (TID) test protocols in the context of advanced transistor technologies such as Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs). In SiGe HBTs, an unexpected shift in collector current is observed during total dose irradiation. Using both device and circuit measurements, we investigate this phenomenon and assess its potential importance in hardness assurance of SiGe components. TCAD simulations were performed to explain the observed current shifts.

show abstract

“…The hardware used in this study came from two sets of IBM's highspeed 3 rd generation SiGe BiCMOS process. The first is a 130 nm, high-speed variant (IBM's 200GHz 8HP technology) labeled here "HP" for "high-performance," and the second is a scaled, lower cost version (IBM's 8WL technology) of the aforementioned technology and is labeled "CP" for "costperformance" [14]. Both total dose testing (X-ray and highenergy protons) and ion microprobe analysis were used for hardness qualification and the results are interpreted through full 3-D Technology Computer Aided Design (TCAD) simulations.…”

Section: Introductionmentioning

confidence: 99%

Impact of deep trench isolation on advanced SiGe HBT reliability in radiation environments

Phillips

Sutton

Appaswamy

et al. 2009

2009 IEEE International Reliability Physics Symposium

View full text Add to dashboard Cite

We investigate, for the first time, the impact of deep trench isolation on the total ionizing dose (TID) and single event upset (SEU) tolerance of advanced SiGe HBTs. We employ a combination of 63MeV protons, 10keV X-rays, and 36MeV oxygen ion microbeam irradiation and compare a 3 rd generation, high-performance (HP), deep-trench isolated, SiGe BiCMOS platform with its cost-performance (CP) variant without deeptrenches. Although the CP SiGe HBTs are shown to be more susceptible to TID damage, the elevated damage is not attributed to variations in deep trench isolation (DTI), but to spacer oxide differences. CP SiGe HBTs are surprisingly found to offer a potential built-in self-mitigation mechanism for SEU, which is a direct result of the influence of the deep trench isolation on the charge collection dynamics associated with ion strikes. Calibrated, full 3D ion strike TCAD simulations are employed to explain the results, revealing substantial enhancement of radial charge diffusion for structures implemented with little to no deep trench. Mitigation of charge collection events are found to occur for emitter-center strikes for devices with limited/eliminated DTI with the caveat of larger collection for outside-DTI ion strikes.

show abstract

A low complexity 0.13 μ SiGe BiCMOS technology for wireless and mixed signal applications

Cited by 11 publications

References 0 publications

250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector

250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector

Re-Examining TID Hardness Assurance Test Protocols for SiGe HBTs

Impact of deep trench isolation on advanced SiGe HBT reliability in radiation environments

Contact Info

Product

Resources

About