Re-Examining TID Hardness Assurance Test Protocols for SiGe HBTs

Cheng, Peng; Pellish, Jonathan A.; Carts, M.A.; Phillips, S.D.; Wilcox, Edward P.; Thrivikraman, Tushar; Najafizadeh, Laleh; Cressler, John D.; Marshall, P.W.

doi:10.1109/tns.2009.2032857

Cited by 8 publications

(3 citation statements)

References 18 publications

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“…As a result, the base current largely increases, and consequently, the current gain drops. The increase in the collector current has been explained by the fact that the inversion layer is connected to the emitter region, and this works as an extended emitter region [6], [20]. The measured current gain as a function of collector current for the higher ion fluences is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…There is no major principal difference in the behavior of SiC compared to Si devices apart from that the SiC material properties allow for larger electric fields and better thermal conductivity. Several of the effects discussed here have been studied previously in Si [4], [5] bipolar junction transistors (BJTs) and also SiGe HBTs [6]. However, the reliability of SiC-based devices also needs to be confirmed in radiation environments.…”

Section: Introductionmentioning

confidence: 91%

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Impact of Ionizing Radiation on the $\hbox{SiO}_{2}/ \hbox{SiC}$ Interface in 4H-SiC BJTs

Usman

Hallén

2012

IEEE Trans. Electron Devices

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Degradation of SiO 2 surface passivation for 4H-SiC power bipolar junction transistors (BJTs) as a result of ion irradiation has been studied to assess the radiation hardness of these devices. Fully functional BJTs with 2700 V breakdown voltage are implanted with 600 keV helium ions at fluences ranging from 1 × 10 12 to 1 × 10 16 cm −2 at room temperature. These ions are estimated to reach the SiO 2 /SiC interface. The current-voltage characteristics before and after irradiation show that the current gain of the devices starts degrading after a helium fluence of 1 × 10 14 cm −2 and decreases up to 20% for the highest fluence of ions. Simulations show that the helium ions induce ionization inside the SiO 2 , which increases the interface charge and leads to a degradation of the BJT performance. Thermal annealing of the irradiated devices at 300 • C, 420 • C, and 500 • C further increases the amount of charge at the interface, resulting in increased base current in the low-voltage range.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 91%

Impact of Ionizing Radiation on the $\hbox{SiO}_{2}/ \hbox{SiC}$ Interface in 4H-SiC BJTs

Usman

Hallén

2012

IEEE Trans. Electron Devices

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“…In 2009, however, SiGe HBT hardness assurance testing was re-evaluated by Cheng et al in [7] for first-generation SiGe HBTs (IBM 5AM). Some unexpected results were observed in the irradiated hardware.…”

Section: Eldrs In Sige Hbtsmentioning

confidence: 99%

Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs

Fleetwood

Cardoso

Song

et al. 2014

IEEE Trans. Nucl. Sci.

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The total ionizing dose response of 4th-generation SiGe HBTs is assessed at both low and high dose rates to evaluate enhanced low dose rate sensitivity (ELDRS) in a new SiGe BiCMOS technology. Both device and circuit results are presented. A bandgap reference circuit topology is chosen to monitor for ELDRS in TID-induced collector current shifts, which have previously been reported in low dose rate studies of SiGe HBTs. The results in this paper also cover previous technology generations from this foundry in order to incorporate a broader view of dose rate effects in SiGe HBTs. No indication of ELDRS was found in any technology generation.Index Terms-Bandgap reference (BGR), enhanced low dose rate sensitivity (ELDRS), high dose rate (HDR), low dose rate (LDR), silicon-germanium heterojunction bipolar transistor (SiGe HBT), total ionizing dose (TID).

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Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation

Sun

Liu

et al. 2019

Radiation Physics and Chemistry

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Re-Examining TID Hardness Assurance Test Protocols for SiGe HBTs

Cited by 8 publications

References 18 publications

Impact of Ionizing Radiation on the $\hbox{SiO}_{2}/ \hbox{SiC}$ Interface in 4H-SiC BJTs

Impact of Ionizing Radiation on the $\hbox{SiO}_{2}/ \hbox{SiC}$ Interface in 4H-SiC BJTs

Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs

Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation

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