Abstract:A laser radar receiver channel targeted at pulsed time-of-flight laser radar applications using 5ns…20ns laser pulses at the 1550nm wavelength region has been designed. The receiver includes a transimpedance preamplifier, post-amplifiers and analog output buffer and has a bandwidth of 15MHz and input reduced total equivalent current noise of ~3nArms without the contribution of the APD noise. The receiver supports both the single shot and transient recording operation modes. By utilizing the time domain compens… Show more
The ranging accuracy of pulsed time-of-flight (TOF) lidar is affected by walk error and jitter error. To solve the issue, the balanced detection method (BDM) based on fiber delay optic lines (FDOL) is proposed. The experiments are carried out to prove the performance improvement of BDM over the conventional single photodiode method (SPM). The experimental results show that BDM can suppress common mode noise and simultaneously shift the signal to high frequency, which reduces the jitter error by approximately 52.4% and maintains the walk error at less than 300 ps with a non-distorted waveform. The BDM can be further applied to silicon photomultipliers.
The ranging accuracy of pulsed time-of-flight (TOF) lidar is affected by walk error and jitter error. To solve the issue, the balanced detection method (BDM) based on fiber delay optic lines (FDOL) is proposed. The experiments are carried out to prove the performance improvement of BDM over the conventional single photodiode method (SPM). The experimental results show that BDM can suppress common mode noise and simultaneously shift the signal to high frequency, which reduces the jitter error by approximately 52.4% and maintains the walk error at less than 300 ps with a non-distorted waveform. The BDM can be further applied to silicon photomultipliers.
“…Avalanche photodiode (APD) is a highly sensitive photodetector that can detect and amplify weak light signals using the avalanche multiplication effect. They have been widely used in optical communications [1,2], laser ranging [3][4][5], and single photon counting [6]. InGaAs materials with a direct band gap have several advantages, such as high electron mobility, a wide range of response wavelengths, and high absorption coefficients in the near-infrared wavelength range [7,8].…”
Avalanche photodiode (APD) is a highly sensitive photodetector commonly used in applications, such as optical fiber communication and LIDAR. However, the 7.7% lattice mismatch between InGaAs and Si creates challenges in growing high-quality InGaAs thin films on Si substrates. Heterogeneous bonded techniques or semiconductor intermediate bonded techniques can effectively resolve this issue, while it is difficult to achieve an ultra-high gain bandwidth product of the APDs. This work designs the wafer-bonded InGaAs/Si APDs with a Poly-Si bonding layer as the charge layer, which is different from the conventional separation absorption gradient multiplication (SAGCM) APD. The doping concentration of the polysilicon (Poly-Si) bonding layer on the performance of the InGaAs/Si APD is calculated. The maximum value of the gain bandwidth product of the APD reaches 350 GHz when the doping concentration of the Poly-Si is set to be 2 × 1017 cm−3. This work may provide guidance for the fabrication of the InGaAs/Si APDs with ultra-high gain bandwidth product.
The applications of 2D material photodetectors in extensive fields, including imaging, health monitoring, tracking, logic operation, ultraviolet monitoring, communications, automatic driving, and acoustic signal detection, have been introduced.
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