A low-power, compact size millimeter-wave two-stage current-reused low noise amplifier in 90-nm CMOS technology

Chou, Hung-Ting; Ke, Zhi-Lin; Chiou, Hwann-Kaeo

doi:10.1109/apmc.2012.6421723

Cited by 6 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Four stages are adapted. Current-reused structure [8] is used in stage 1 and stage 2 to minimize the power consumption, which is…”

Section: Chipmentioning

confidence: 99%

A Compact Ka-Band TDD Transceiver System Module With Attractive Temperature Characteristic

Yin¹,

Dang²,

Wang³

et al. 2018

PIER C

View full text Add to dashboard Cite

This paper presents a Ka-band TDD transceiver system module for the secondary surveillance radar application with attractive temperature characteristic. Four multifunction chips and a MEMS filter are designed and fabricated in GaAs pseudomorphic high electron mobility transistor (pHEMT) process and MEMS technology in this work, respectively. These multifunction chips and MEMS filter with some other commercial chips are assembled in a compact cavity to form the transceiver system. The temperature characteristics of the designed chips and the whole transceiver module are measured respectively in this work. Benefiting from the designed temperature compensation circuits on the chips, the transceiver is able to work from −55 • C to +75 • C with little performance fluctuation. The noise figure of the receiver is less than 3.7 dB in the 400 MHz working bandwidth. Its dynamic range is more than 59 dB with more than 23.9 dB power gain. The maximum output power of the transmitter is larger than 30.3 dBm. The system only has two input/output ports and one control bus, which is suitable for the large-scale system integration.

show abstract

“…Four stages are adapted. Current-reused structure [8] is used in stage 1 and stage 2 to minimize the power consumption, which is…”

Section: Chipmentioning

confidence: 99%

A Compact Ka-Band TDD Transceiver System Module With Attractive Temperature Characteristic

Yin¹,

Dang²,

Wang³

et al. 2018

PIER C

View full text Add to dashboard Cite

show abstract

“…3. The LNA contains four stages, and the current-reuse structure [6,7,8] is used to minimize the power consumption. The stage 1 and 2 reuse the DC current and the same as the stage 3 and 4.…”

Section: Current-reuse Amplifiers and Interconnection Bonding Wiresmentioning

confidence: 99%

A Ka-band TDD front-end chip with 24.7% bandwidth and temperature compensation technology

Yin

Wang

Yang³

et al. 2017

IEICE Electron. Express

View full text Add to dashboard Cite

This paper presents a compact Ka-band TDD front-end chip with temperature compensation technology. The front-end chip is integrated with a passive switch, a low noise amplifier (LNA) and a power amplifier (PA). Temperature compensation bias network is used to reduce the gain ripple versus temperature, and co-design method between the amplifiers and the switch is used to enhance the bandwidth. The gain ripple is less than ²0.7 dB when the temperature ranges from −55°C to +85°C. The circuit works from 30.5 GHz∼39.1 GHz, with a 24.7% relative bandwidth. The chip is fabricated with GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The gain of the receiver (RX) link is 26.6 dB, and the noise figure of it is 2.95 dB at 36.5 GHz. The gain of the transmitter (TX) link is 26.0 dB, and the output 1 dB compression point of it is 16 dBm.

show abstract

A Millimetre-Wave LNA for Défense Covert Warfare Operations and Cybersecurity Applications

Mythry,

Harsha Vardhini,

Dinesh Kumar

et al. 2024

Lecture Notes in Electrical Engineering

View full text Add to dashboard Cite

A low-power, compact size millimeter-wave two-stage current-reused low noise amplifier in 90-nm CMOS technology

Cited by 6 publications

References 6 publications

A Compact Ka-Band TDD Transceiver System Module With Attractive Temperature Characteristic

A Compact Ka-Band TDD Transceiver System Module With Attractive Temperature Characteristic

A Ka-band TDD front-end chip with 24.7% bandwidth and temperature compensation technology

A Millimetre-Wave LNA for Défense Covert Warfare Operations and Cybersecurity Applications

Contact Info

Product

Resources

About