A Low-Power Fully-Mosfet Voltage Reference Generator for 90 nm CMOS Technology

Naro, G. Di; Lombardo, Giuseppe; Paolino, Carmine; Lullo, G.

doi:10.1109/icicdt.2006.220834

Cited by 12 publications

(12 citation statements)

References 7 publications

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“…I is the sum of a I 2 and b I 2 , and 2 I is same as 3 I , In the Ref [12] the ordinary OP-AMP is used. We take the idea from Ref [6] to modify the OP-AMP for 1V operation.…”

Section: Cmos Circuitmentioning

confidence: 99%

A CMOS Band Gap Reference Generator for Low Voltage Supply with Reduced Psrr with the Application of A (-ve) Feedback Loop

Ghosh¹

2017

IJRASET

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We all know that the basic building block of any analog circuit is the reference voltage generator. The objective of reference generation is to establish a DC voltage or current that is independent of the supply and process and has a well-defined behavior with temperature. Band Gap Reference (BGR) is one of the most popular reference generators. In the conventional BGR circuit, the reference voltage Vref is the summation of thermal voltage VT and the base to emitter voltage of a transistor (Vf).The thermal voltage VT has a (+Ve) temperature coefficient (TC), whereas Vf has a (-Ve) temperature coefficient (TC).So BGR is independent of temperature .The traditional BGR circuit generates a reference voltage about 1.12V.So this circuit limits a low supply-voltage operation below 1v. In this paper a new BGR circuit in 0.25μm technology is proposed which is containing a extra (-ve) feedback loop to gate very low reference voltage as well as to stabilize this reference voltage when it is operating below 1v .The TC of this reference generator is getting even zero by applying a (-ve) feedback loop. For a temperature variation between -20 0 C and 100 0 C, the produced reference voltage is absolutely independent of temperature variation together with the capability of operating at very low supply voltage (less than 1V).The high PSRR of this circuit can be modified by changing the feedback resistance value.

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“…I is the sum of a I 2 and b I 2 , and 2 I is same as 3 I , In the Ref [12] the ordinary OP-AMP is used. We take the idea from Ref [6] to modify the OP-AMP for 1V operation.…”

Section: Cmos Circuitmentioning

confidence: 99%

A CMOS Band Gap Reference Generator for Low Voltage Supply with Reduced Psrr with the Application of A (-ve) Feedback Loop

Ghosh¹

2017

IJRASET

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“…It is well known that the emitter‐base voltage of p‐n‐p bipolar junction substrate transistors that are available in CMOS processes shows limited linearity in a very wide temperature range with the result that curvature compensation is required for high precision applications. Nevertheless, by using MOSFET devices in weak inversion 6–10 such that the threshold voltage temperature dependence is employed for gate‐source CTAT voltages generation did not lead to a purely linear voltage function with respect to temperature. The latter is demonstrated in 8.…”

Section: Circuit Designmentioning

confidence: 99%

“…Nevertheless, by using MOSFET devices in weak inversion 6–10 such that the threshold voltage temperature dependence is employed for gate‐source CTAT voltages generation did not lead to a purely linear voltage function with respect to temperature. The latter is demonstrated in 8. Moreover, as it is reported in 11, the assumption that the threshold voltage is a linear function of temperature may hold approximately in the temperature range between − 20 and 120 ∘ C. Furthermore, the fact that the subthreshold slope n is a temperature‐dependent parameter may also result in the aforementioned nonlinearity as it is reported in 7.…”

Section: Circuit Designmentioning

confidence: 99%

“…On the other hand, operation of MOSFET devices in the subthreshold regime allows for power dissipation reduction while also more efficient use of the available headroom is employed, thus operation at sub‐1V supply voltage becomes feasible. In 6–10, MOSFET devices are biased in weak inversion in a variety of circuits' configurations such that PTAT and CTAT signals are generated via their gate‐source voltage targeting at a stable reference voltage over temperature. In addition to the above mentioned 3–10, several other voltage reference generators 11–21 have been reported in the past, which however due to their limited temperature range of operation, limited stability and requirement for large area or for higher than 0.9 V minimum supply voltage are not fully suitable for sub‐1V, wide temperature range applications where the supply voltage varies between 0.9 V and higher than 1 V voltages.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A sub‐1V supply CMOS voltage reference generator

Τσίτουρας¹,

Plessas²,

Birbas³

et al. 2011

Circuit Theory & Apps

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SUMMARYAn integrated sub-1V voltage reference generator, designed in standard 90-nm CMOS technology, is presented in this paper. The proposed voltage reference circuit consists of a conventional bandgap core based on the use of p-n-p substrate vertical bipolar devices and a voltage-to-current converter. The former produces a current with a positive temperature coefficient (TC), whereas the latter translates the emitterbase voltage of the core p-n-p bipolar device to a current with a negative TC. The circuit includes two operational amplifiers with a rail-to-rail output stage for enabling stable and robust operation overall process and supply voltage variations while it employs a total resistance of less than 600 K . Detailed analysis is presented to demonstrate that the proposed circuit technique enables die area reduction. The presented voltage reference generator exhibits a PSRR of 52.78 dB and a TC of 23.66 ppm/ • C in the range of −40 and 125 • C at the typical corner case at 1 V. The output reference voltage of 510 mV achieves a total absolute variation of ±3.3% overall process and supply voltage variations and a total standard deviation, , of 4.5 mV, respectively, in the temperature range of −36 and 125 • C.

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“…For the same reason, In the Ref [12] the ordinary OP-AMP is used. We take the idea from Ref [6] to modify the OP-AMP for 1V operation.…”

Section: A Circuit Descriptionmentioning

confidence: 99%

A CMOS Band Gap Reference Generator for Low Voltage Supply with High SNR the Application of a (-ve) Feedback Loop

Ghosh¹

2018

IJRASET

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Reference voltages or currents that exhibit little dependence on temperature prove essential in many communication circuits. Since most process parameters vary with temperature, if a reference generator is temperature independent, then it is supply independent as well. The output voltage of the conventional BGR is 1.25V which limits the operation of the BGR below 1.2V supply. To overcome this problem we use the conception of ref [12] to get a BGR operating below 1V .But we modified the OPAMP as shown in fig 2, by using a current mirror active load to get a better result. But also the BGR obtained is not absolutely temperature independent. To make it absolutely temperature independent we use a (-ve) feedback loop, that feeds a little part of the output voltage to the input in out of phase.

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A Low-Power Fully-Mosfet Voltage Reference Generator for 90 nm CMOS Technology

Cited by 12 publications

References 7 publications

A CMOS Band Gap Reference Generator for Low Voltage Supply with Reduced Psrr with the Application of A (-ve) Feedback Loop

A CMOS Band Gap Reference Generator for Low Voltage Supply with Reduced Psrr with the Application of A (-ve) Feedback Loop

A sub‐1V supply CMOS voltage reference generator

A CMOS Band Gap Reference Generator for Low Voltage Supply with High SNR the Application of a (-ve) Feedback Loop

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