A Low-Power, Wide-Dynamic-Range Semi-Digital Universal Sensor Readout Circuit Using Pulsewidth Modulation

Lu, Julia Hsin-Lin; Inerowicz, M; Joo, Sanghoon; Kwon, Jong-Kee; Jung, Byunghoo

doi:10.1109/jsen.2010.2085430

Cited by 80 publications

(31 citation statements)

References 15 publications

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“…Common readout circuits for resistive measurements are based on techniques involving RC-decay, oscillator frequency, resistance-to-current conversion and resistance-to-voltage conversion [26]. In the first approach, a voltage pulse is applied to the RC circuit, and the time it takes for the output voltage to reach to a certain threshold can be measured from the variation in resistance or capacitance [27]. This method is effective for resistive sensors that have a large dynamic range.…”

Section: Readout Circuitrymentioning

confidence: 99%

A Feedback Controlled MEMS Nanopositioner for On-Chip High-Speed AFM

Mohammadi

Fowler

Yong

et al. 2014

J. Microelectromech. Syst.

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We report the design of a two-degree-of-freedom microelectromechanical systems nanopositioner for on-chip atomic force microscopy (AFM). The device is fabricated using a silicon-on-insulator-based process to function as the scanning stage of a miniaturized AFM. It is a highly resonant system with its lateral resonance frequency at ∼850 Hz. The incorporated electrostatic actuators achieve a travel range of 16 µm in each direction. Lateral displacements of the scan table are measured using a pair of electrothermal position sensors. These sensors are used, together with a positive position feedback controller, in a feedback loop, to damp the highly resonant dynamics of the stage. The feedback controlled nanopositioner is used, successfully, to generate high-quality AFM images at scan rates as fast as 100 Hz.[2013-0063]

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Section: Readout Circuitrymentioning

confidence: 99%

A Feedback Controlled MEMS Nanopositioner for On-Chip High-Speed AFM

Mohammadi

Fowler

Yong

et al. 2014

J. Microelectromech. Syst.

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“…The technique achieves good results both for low resistance [12] and high resistance [13] read-out. This means that a time period of a 1-bit digital signal is proportional to the electrical properties of nanomaterials under test.…”

Section: Fast Zno-nws Assembling Onto M4n Chipmentioning

confidence: 99%

“…On the contrary, the other flow implies a mixed-signal design that converts resistance and capacitance to the time domain. This technique can be implemented using a lowcomplexity architecture as PWM circuits [12], Time-overThreshold [14], [15], resistance-to-period converters [16] and oscillators [17], [18]. These circuits generates quasi-digital outputs that are compliant with commercial digital electronics (e.g.…”

Section: Fast Zno-nws Assembling Onto M4n Chipmentioning

confidence: 99%

A low-power Read-Out Circuit and low-cost assembly of nanosensors onto a 0.13 μm CMOS Micro-for-Nano chip

Bonanno

Cauda

Crepaldi

et al. 2013

5th IEEE International Workshop on Advances in Sensors and Interfaces IWASI

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This paper describes the Micro-for-Nano (M4N) approach as effective solution to overcome challenges related to the nanomaterial assembly with electrodes, the low-noise measurement of nanomaterial electrical properties and the CMOS design of the nanosensor electronic interface. This paper presents both the fabrication process of a nanodevice onto the IC surface using Dielectrophoresis (DEP) and the ReadOut Circuit (ROC) used for the inspection of the electrical properties of nanowires (NW). The ROC includes a Time-overThreshold circuit which has been characterized stand-alone. It shows maximum measurement error of 0.8% with a maximum linearity error below 1.86% in the range 300 kΩ-100 MΩ. The ROC occupies 0.0067 mm 2 silicon area and simulation data shows that the maximum power consumption is 8.9 µW at 1.2 V. The paper presents first measurement results obtained on fabricated prototype chips based on ZnO-NW.

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“…The semi-digital readout circuit acts as capacitance to pulse-width-modulated signal (PWM) block [3]. The pulse width varies as a function of the RC time constant.…”

Section: Capacitive Readout Circuitmentioning

confidence: 99%

“…The measurement is based on a capacitive readout interface circuit composed only of 67 transistors with a 105 µm x 105 µm footprint that consumes as little as 60 µW [3]. This is achieved by accurately sensing the capacitance change around the contact region at over sampling rates ranging from 10 kHz to 5 MHz or more.…”

Section: Introductionmentioning

confidence: 99%

Real-time monitoring of contact behavior of RF MEMS switches with a very low power CMOS capacitive sensor interface

Fruehling

Khater

Jung

et al. 2010

2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS)

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This paper presents the first ultra-low power, fully electronic methodology for real-time monitoring of the dynamic behavior of RF MEMS switches. The measurement is based on a capacitive readout circuit composed of 67 transistors with a 105 µm x 105 µm footprint consuming as little as 60 µW. This is achieved by accurately sensing the capacitance change around the contact region at sampling rates from 10 kHz to 5 MHz. Experimental and simulation results show that timing of not only the first contact event but also all subsequent contact bounces can be accurately measured with this technique without interfering with the switch performance. This demonstrates the potential of extending this technique to real-time on-chip dynamic monitoring of packaged RF MEMS switches through their entire lifetime and after their integration in the final system.

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A Low-Power, Wide-Dynamic-Range Semi-Digital Universal Sensor Readout Circuit Using Pulsewidth Modulation

Cited by 80 publications

References 15 publications

A Feedback Controlled MEMS Nanopositioner for On-Chip High-Speed AFM

A Feedback Controlled MEMS Nanopositioner for On-Chip High-Speed AFM

A low-power Read-Out Circuit and low-cost assembly of nanosensors onto a 0.13 μm CMOS Micro-for-Nano chip

Real-time monitoring of contact behavior of RF MEMS switches with a very low power CMOS capacitive sensor interface

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A Low-Power, Wide-Dynamic-Range Semi-Digital Universal Sensor Readout Circuit Using Pulsewidth Modulation

Cited by 80 publications

References 15 publications

A Feedback Controlled MEMS Nanopositioner for On-Chip High-Speed AFM

A Feedback Controlled MEMS Nanopositioner for On-Chip High-Speed AFM

A low-power Read-Out Circuit and low-cost assembly of nanosensors onto a 0.13 &#x03BC;m CMOS Micro-for-Nano chip

Real-time monitoring of contact behavior of RF MEMS switches with a very low power CMOS capacitive sensor interface

Contact Info

Product

Resources

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A low-power Read-Out Circuit and low-cost assembly of nanosensors onto a 0.13 μm CMOS Micro-for-Nano chip