A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors

Pan, James N.; Woo, C.; Ngo, Minh Van; Besser, Paul R.; Pellerin, John; Qi, Xiang; Lin, Ming-Ren

doi:10.1109/led.2003.815937

Cited by 12 publications

(14 citation statements)

References 6 publications

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“…[1,2] It is generally accepted that metal gate electrodes must be introduced along with high-k gate dielectrics, [3] but single metal materials have poor thermal stability and high chemical reactivity at elevated temperatures. So far, a number of metal nitride materials, such as MoN, WN, TiN, HfN, TaN, and TaCN, [4][5][6] have been investigated as a gate electrode for high-k dielectrics. Among these, TaCN film is the most promising candidate due to excellent thermal stability and a controllable work function.…”

Section: Introductionmentioning

confidence: 99%

“…Among these, TaCN film is the most promising candidate due to excellent thermal stability and a controllable work function. [6] Recently, TaCN film has drawn much interest as a metal gate electrode because of its low film resistivity. [7] Until now, methods such as physical vapor deposition (PVD) and CVD have been reported for the deposition of tantalum carbonitride thin films.…”

Section: Introductionmentioning

confidence: 99%

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Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert‐Butylimido‐tris(diethylamido)‐tantalum (TBTDET), and its Effect on Material Properties

Song

Rhee

2008

Chemical Vapor Deposition

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TaCN films are deposited with plasma-enhanced atomic layer deposition (PEALD) using tert-butylimido-tris(diethylamido)-tantalum and hydrogen. It is confirmed that the film is a homogeneous mixture of TaC, TaN, Ta 3 N 5 , and Ta 2 O 5 with the oxide phase formed from the post-deposition uptake of oxygen from the air. It is shown that the electrical properties of TaCN film are affected by the phase composition in the film. The effects of process parameters, such as deposition temperature, plasma power, and cycle time, on the film composition and electronic properties are evaluated. With the increase of the TaC and TaN phases over the Ta 3 N 5 phase, the resistivity of the film is decreased. As the deposition temperature, plasma power, and plasma cycle time are increased, the carbide and TaN phases in the film are increased and the film resistivity is decreased. The uptake of oxygen after deposition is up to 10 at.-%, and the resistivity of TaCN film deposited using PEALD is as low as 350 mV Á cm.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert‐Butylimido‐tris(diethylamido)‐tantalum (TBTDET), and its Effect on Material Properties

Song

Rhee

2008

Chemical Vapor Deposition

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“…So far, a number of metal nitride materials have been investigated as a gate electrode for high-k dielectrics such as MoN, WN, TiN, HfN, TaN, and TaCN. 4,5,6 Among these, TaCN film is the most promising candidate due to the excellent thermal stability and the controllable work function. 5 Recently, TaCN film draws much interest as a metal gate electrode for its low film resistivity and thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Tantalum Carbo-nitride Thin Films Deposited with Atomic Layer Deposition Process

Song

Rhee

2008

ECS Trans.

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Tantalum carbo-nitride (TaCN) thin films were deposited on SiO 2 surface with the plasma enhanced atomic layer deposition (PEALD) and thermal atomic layer deposition using tertbutylimido-tris (diethylamido)-tantalum (TBTDET) and reactive gas such as hydrogen and ammonia. It was confirmed that the film was a mixture of TaC, TaN, Ta 3 N 5 and Ta 2 O 5 with oxide phase formed from the post-deposition uptake of oxygen from the air. It was shown that electrical properties of TaCN film were affected by the phase composition in the film. Effect of the process parameters such as deposition temperature and plasma power was studied and their effect on phase composition and electronic properties was evaluated. With the increase of the carbide phase and TaN phase over Ta 3 N 5 phase, the resistivity of the film was decreased. As the deposition temperature was increased, the carbide phase and TaN phase in the film were increased and the film resistivity was decreased. The formation of carbide phase was suppressed in the ammonia ALD process. The uptake of oxygen after deposition was about 10 atomic % with the PEALD process and about 30 atomic % with thermal ALD process and it is believed that denser film could be obtained with plasma.

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“…Various metal nitride materials have been suggested such as MoN, WN, HfN, TiN, TaN, and TaC x N y . [2][3][4] TaC x N y is one of the most promising gate materials because it has excellent thermal stability, controllable work function, and low resistivity. 4,5 TaC x N y films deposited with an organometallic precursor has many phases, such as TaC, TaN, Ta 3 N 5 , and Ta 2 O 5 , with the oxide phase formed from the postdeposition oxygen uptake in the air, and the phase composition affects the film properties.…”

mentioning

confidence: 99%

“…[2][3][4] TaC x N y is one of the most promising gate materials because it has excellent thermal stability, controllable work function, and low resistivity. 4,5 TaC x N y films deposited with an organometallic precursor has many phases, such as TaC, TaN, Ta 3 N 5 , and Ta 2 O 5 , with the oxide phase formed from the postdeposition oxygen uptake in the air, and the phase composition affects the film properties. 6 Among these phases, the TaC phase has low resistivity ͑18 ⍀ cm͒ and acceptable work function ͑4.28 eV͒ for n-metal-oxidesemiconductor ͑MOS͒ field effect transistor.…”

mentioning

confidence: 99%

Plasma-Enhanced Atomic Layer Deposition of TaC[sub x]N[sub y] Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas

Cho¹,

Rhee²

2010

Electrochem. Solid-State Lett.

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TaC x N y film was deposited with plasma-enhanced atomic layer deposition using tert-butylimido͓tri-diethylamido͔tantalum and methane/hydrogen reactive gas mixture. The effect of the methane concentration in the gas mixture on the film property was studied. The resistivity was the lowest at 360 ⍀ cm with 1.5 mol % methane due to the increase in the TaC conducting phase and with over 2.5 mol %, the resistivity was increased due to the incorporation of free carbon. The work function of the film was measured from the metal-oxide-semiconductor structure with a slanted oxide layer. With the introduction of 1.5-2.5% methane, the TaC x N y film with lower work function could be obtained.The feature size of integrated circuits ͑ICs͒ has been continuously reduced to increase device density and speed. Recently, the IC feature size falls below 45 nm and a traditional poly-Si gate has problems such as gate depletion, high gate resistance, and boron penetration. 1 Various metal gate materials are suggested to solve these problems but elemental metal gate has poor thermal stability and high reactivity. Various metal nitride materials have been suggested such as MoN, WN, HfN, TiN, TaN, and TaC x N y . [2][3][4] TaC x N y is one of the most promising gate materials because it has excellent thermal stability, controllable work function, and low resistivity. 4,5 TaC x N y films deposited with an organometallic precursor has many phases, such as TaC, TaN, Ta 3 N 5 , and Ta 2 O 5 , with the oxide phase formed from the postdeposition oxygen uptake in the air, and the phase composition affects the film properties. 6 Among these phases, the TaC phase has low resistivity ͑18 ⍀ cm͒ and acceptable work function ͑4.28 eV͒ for n-metal-oxidesemiconductor ͑MOS͒ field effect transistor. 7,8 The TaN phase is also conducting with a resistivity ϳ250 ⍀ cm and a work function of 4.2-4.5 eV. However, Ta 3 N 5 and Ta 2 O 5 phases are insulating.The TaC x N y film was deposited with physical vapor deposition, chemical vapor deposition ͑CVD͒, and atomic layer deposition ͑ALD͒. 9-11 In the CVD of the film with organometallic precursors, carbon can be incorporated into the film and it is important to understand and control the reaction pathways to adjust the carbon content and the phase composition. The ALD, including plasmaenhanced atomic layer deposition ͑PEALD͒, has benefits such as excellent conformality on the high aspect ratio structure, fine film thickness controllability, good uniformity, and low deposition temperature. The TaC x N y films deposited using ALD, especially PEALD, have low resistivity and low oxygen uptake. 6 Previous research on TaC x N y deposition with PEALD have shown that the phase composition of the TaC x N y film using tertbutylimido͓tri-diethylamido͔tantalum ͑TBTDET͒ precursor and hydrogen depended on the operating variables such as deposition temperature and plasma power. 6,11,12 In this paper, the PEALD process was studied using TBTDET precursor and methane/hydrogen mixture as a reactive gas. The introduction of methane is...

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A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors

Cited by 12 publications

References 6 publications

Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert‐Butylimido‐tris(diethylamido)‐tantalum (TBTDET), and its Effect on Material Properties

Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert‐Butylimido‐tris(diethylamido)‐tantalum (TBTDET), and its Effect on Material Properties

Characteristics of Tantalum Carbo-nitride Thin Films Deposited with Atomic Layer Deposition Process

Plasma-Enhanced Atomic Layer Deposition of TaC[sub x]N[sub y] Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas

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