A Low-Voltage 1 Mb FRAM in 0.13 $\mu$m CMOS Featuring Time-to-Digital Sensing for Expanded Operating Margin

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

“…The perovskite structured lead zirconate titanate (PZT) is up to now the state-of-the-art material for ferroelectric memory fabrication. 1 The drawback of PZT and many other ferroelectric materials is the difficult integration into the CMOS technology and the partially toxic materials used, such as lead. As a consequence, the integration density is much lower compared to, e.g., NAND Flash.…”

A 3.4-pJ FeRAM-Enabled D Flip-Flop in 0.13-$\mu \hbox{m}$ CMOS for Nonvolatile Processing in Digital Systems

“…Ferroelectric capacitors are a promising lowpower nonvolatile technology for this application. Compared to other nonvolatile technologies, ferroelectric random access memory (FeRAM) has been shown to consume the least amount of energy per read or write operation compared to other nonvolatile memory technologies; although, it has a larger cell area [4]. Several developments in nonvolatile processing have been introduced [5]- [7], but practical challenges related to system integration prevent their widespread use while further improvement in save/restore energy and time can still expand the scope of this technology.…”

“…A register can quickly save its state to ferroelectric capacitors with simple static CMOS logic. A circuit-level description of the ferroelectric capacitor can be found in [4].…”

A High-Voltage Isolated Current Sense Amplifier for Fully CMOS Compatible Non-volatile Memories

“…The recent trend of embedded non-volatile memories (NVM) includes resistive RAM (RRAM) [1], magnetoresistive RAM (MRAM) [2] and ferroelectric RAM (FeRAM) [3]. They can be integrated with the standard CMOS logic processes with shorter program/erase times than those of the conventional flash memories.…”