A Manufacturing Cost and Supply Chain Analysis of SiC Power Electronics Applicable to Medium-Voltage Motor Drives

Horowitz, Kelsey; Remo, Timothy; Reese, Samantha

doi:10.2172/1349212

Cited by 14 publications

(12 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, high-purity SiC powder, which can be used to grow SiC boules, is only available from a limited number of suppliers, and is relatively expensive [25]. At present, the United States is the global leader in the production of SiC substrates and wafers, followed by Europe and Japan.…”

Section: High-temperature Componentsmentioning

confidence: 99%

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

View full text Add to dashboard Cite

The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

show abstract

Section: High-temperature Componentsmentioning

confidence: 99%

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

View full text Add to dashboard Cite

show abstract

“…Furthermore, such analysis helps determine if the increased costs associated with widebandgap devices, specifically SiC, could be overcome by the increased performance enabled by SiC capabilities. In [1], Horowotiz et al demonstrated, through a bottoms-up model that the savings from space and cooling in a SiC-based 1-MW variable-frequency drive resulted in an overall drive cost similar to the current industry standards. In order to understand and judge the cost benefits associated with the proliferation of widebandgap based photovoltaic (PV) inverters, it is necessary to model their MSP as well as determine the levelized cost of energy (LCOE) if such inverters were to be used in widespread grid integration of PV systems.…”

Section: Introductionmentioning

confidence: 99%

Performance and Techno-Economic Evaluation of a Three-Phase, 50-kW SiC-Based PV Inverter

Singh

Reese

Akar

2019

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Self Cite

View full text Add to dashboard Cite

show abstract

“…Stoke's shifts for V − Si defects remain on the order of 10 meV [16]. Furthermore, the bulk material properties of SiC make it more amenable than diamond to high-voltage, high-power, and high-temperature applications and it is also more promising as a long-term candidate material due to its physical durability [17], engineering flexibility [18], and increasingly inexpensive manufacturing cost [19,20]. One disadvantage is that the optically detected magnetic resonance of V − Si SiC has a lower visibility compared to that of the (NV) − center in diamond, but this too is being overcome [21].…”

Section: Introductionmentioning

confidence: 99%

Semiconductor color-center structure and excitation spectra: Equation-of-motion coupled-cluster description of vacancy and transition-metal defect photoluminescence

2018

View full text Add to dashboard Cite

Valence excitation spectra are computed for deep-center silicon-vacancy defects in 3C, 4H, and 6H silicon carbide (SiC) and comparisons are made with literature photoluminescence measurements. Optimizations of nuclear geometries surrounding the defect centers are performed within a Gaussian basis-set framework using many-body perturbation theory or density functional theory (DFT) methods, with computational expenses minimized by a QM/MM technique called SIMOMM. Vertical excitation energies are subsequently obtained by applying excitation-energy, electron-attached, and ionized equation-of-motion coupled-cluster (EOMCC) methods, where appropriate, as well as time-dependent (TD) DFT, to small models including only a few atoms adjacent to the defect center. We consider the relative quality of various EOMCC and TD-DFT methods for (i) energy-ordering potential ground states differing incrementally in charge and multiplicity, (ii) accurately reproducing experimentally measured photoluminescence peaks, and (iii) energy-ordering defects of different types occurring within a given polytype. The extensibility of this approach to transition-metal defects is also tested by applying it to silicon-substituted chromium defects in SiC and comparing with measurements. It is demonstrated that, when used in conjunction with SIMOMM-optimized geometries, EOMCC-based methods can provide a reliable prediction of the ground-state charge and multiplicity, while also giving a quantitative description of the photoluminescence spectra, accurate to within 0.1 eV of measurement for all cases considered.

show abstract

A Manufacturing Cost and Supply Chain Analysis of SiC Power Electronics Applicable to Medium-Voltage Motor Drives

Abstract: NREL prints on paper that contains recycled content.

Cited by 14 publications

References 8 publications

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Performance and Techno-Economic Evaluation of a Three-Phase, 50-kW SiC-Based PV Inverter

Semiconductor color-center structure and excitation spectra: Equation-of-motion coupled-cluster description of vacancy and transition-metal defect photoluminescence

Contact Info

Product

Resources

About