A Materials Approach to Resistive Switching Memory Oxides

Hasan, Musarrat; Dong, Rui; Lee, D.S.; Seong, Dong-jun; Choi, Hyobin; Pyun, M. B.; Hwang, Hyun Tae

doi:10.5573/jsts.2008.8.1.066

Cited by 23 publications

(11 citation statements)

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“… 43 – and particularly the contribution 44 therein) the mechanisms are quite different. Materials of choice are oxides, chalcogenides of transition metals 45 46 47 48 and more complex compounds like AM4X8 49 . They are usually considered as systems with strong electronic correlations whose fingerprint is the Mott insulator state.…”

Section: Discussionmentioning

confidence: 99%

Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2

Svetin

Vaskivskyi

Brazovskiǐ

et al. 2017

Sci Rep

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Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS2, or it is a result of subtle inter-layer “orbitronic” re-ordering of its stacking structure. We report on in-plane (IP) and out-of-plane (OP) resistance switching by current-pulse injection at low temperatures. Elucidating the controversial theoretical predictions, we also report on measurements of the anisotropy of the electrical resistivity below room temperature. From the T-dependence of ρ⊥ and ρ||, we surmise that the resistivity is more consistent with collective motion than single particle diffusive or band-like transport. The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS2 shows resistance switching arising from an interplay of both IP and OP correlations.

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Section: Discussionmentioning

confidence: 99%

Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2

Svetin

Vaskivskyi

Brazovskiǐ

et al. 2017

Sci Rep

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“…His discoveries of unusual structures and the mixed valence nature of these new phases inspired explosive growth of interest to these new oxides-based phases [ 10 , 11 , 12 , 13 , 14 ]. These new non-stoichiometric systems turned out to be primarily of great importance in electronics as conducting/semiconducting materials [ 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ] and quite recently in catalysis [ 23 , 24 , 25 , 26 , 27 , 28 ], and nano-technology [ 29 , 30 , 31 ]. One of the most exciting applications of a variety of metal oxides is area of non-linear optical materials [ 32 , 33 , 34 , 35 , 36 ].…”

Section: Introductionmentioning

confidence: 99%

New Solids in As-O-Mo, As(P)-O-Mo(W) and As(P)-O-Nb(W) Systems That Exhibit Nonlinear Optical Properties

et al. 2021

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Interactions between well-mixed fine powders of As2O3, P2O5, MoO3, WO3 and Nb2O5 at different stoichiometry in quartz ampoules under vacuum at ~1000 °C in the presence of metallic molybdenum (or niobium), over several weeks, led to shiny dichroic crystalline materials being formed in cooler parts of the reaction vessel. An addition of small quantities of metals-Mo or Nb-was made with the aim of partially reducing their highly oxidized Mo(VI), W(VI) or Nb(V) species to corresponding Mo(V), W(V) and Nb(IV) centers, in order to form mixed valence solids. Sublimed crystals of four new compounds were investigated using a variety of techniques, with prime emphasis on the X-ray analysis, followed by spectroscopy (diffusion reflectance, IR, Raman and EPR), second harmonic generation (SHG), thermal analysis under N2 and air atmosphere, and single crystals electrical conductivity studies. The results evidenced the formation of new complex solids of previously unknown compositions and structures. Three out of four compounds crystallized in non-centrosymmetric space groups and represent layered 2D polymeric puckered structures that being stacked on each other form 3D lattices. All new solids exhibit strong second-harmonic-generation (SHG effect; based on YAG 1064 nm tests with detection of 532 nm photons), and a rare photosalient effect when crystals physically move in the laser beam. Single crystals’ electrical conductivity of the four new synthesized compounds was measured, and the results showed their semiconductor behavior. Values of band gaps of these new solids were determined using diffusion reflectance spectroscopy in the visible region. Aspects of new solids’ practical usefulness are discussed.

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“…Resistive random access memory (RRAM) devices have attracted considerable attention due to exhibiting most of these features. [4][5][6] A RRAM cell is constructed using metal/insulator/metal capacitors, where the insulator is typically constituted from metal oxide dielectrics. The resistivity of metal oxides can be electrically switched between a low resistance state (LRS) and high resistance state (HRS), where the current-voltage (I À V) characteristics exhibit a pronounced hysteresis.…”

Section: Introductionmentioning

confidence: 99%

Anomalous resistive switching phenomenon

Mojarad

Goss

Kwa

et al. 2012

Journal of Applied Physics

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Resistive switching was observed in Pt/SrTiO3/Pt capacitor devices. The switching depends on both the amplitude and polarity of the applied voltage and cannot be described as either bipolar or unipolar resistive switching. We term this behavior antipolar due to the opposite polarity of the set voltage relative to the previous reset voltage. A model based on electron injection by tunneling at interfaces and a Poole-Frenkel mechanism through the bulk is proposed. This model is quantified by use of a simple mathematical equation to simulate the experimental results.

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A Materials Approach to Resistive Switching Memory Oxides

Cited by 23 publications

References 0 publications

Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2

Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2

New Solids in As-O-Mo, As(P)-O-Mo(W) and As(P)-O-Nb(W) Systems That Exhibit Nonlinear Optical Properties

Anomalous resistive switching phenomenon

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