A MD study of low energy boron bombardment on silicon

Pérez-Martı́n, A.M.C.; Domı́nguez-Vázquez, Javier; Jiménez-Rodrı́guez, J.J.

doi:10.1016/s0168-583x(99)01166-0

Cited by 12 publications

(2 citation statements)

References 27 publications

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“…6 shows depth distributions of vacancies and interstitials formed by B 1 and B 10 implantation with an incident energy of 200 eV/atom. The definitions of vacancy and interstitial are taken from Peréz-Martín et al [17]. For B 10 , the profiles have been normalized to indicate the number of vacancies or interstitials created by one B atom in a cluster.…”

Section: Range and Damage By Cluster Implantationmentioning

confidence: 99%

“…Those two distributions indicate that, at the impact of B 1 , only one knocked-on atom is displaced from its lattice site while the surrounding atoms maintain lattice positions. This results in the formation of point defects having certain structures [17]. Following the impact of B 10 , the peak-and-valley structure is not found around vacancies within 0.3 nm.…”

Section: Range and Damage By Cluster Implantationmentioning

confidence: 99%

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Molecular dynamics simulations of cluster impacts on solid targets: implantation, surface modification, and sputtering

Aoki

2013

J Comput Electron

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The collisions of cluster projectiles on solid targets were studied using molecular dynamics (MD) simulations. The penetration range and damage induced by small boron and carbon cluster implantations are compared with those induced by monomers with the same energy per atom. The simulations indicated enhanced penetration depth and the formation of dense track damage at the surface region. In addition, large argon and fluorine clusters (up to 1 million atoms) have shown effects such as crater formation and low-damage surface etching of silicon. The MD simulations revealed that cluster penetration and crater formation depends not on the total incident energy, but on the incident energy per atom, and that the damage threshold for the argon cluster is several eV/atom. In the impact of a very large and slow fluorine cluster on silicon, an enhancement of chemical reactivity at the near surface region was observed because of the high density of fluorine molecules depositing kinetic energy.

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Section: Range and Damage By Cluster Implantationmentioning

confidence: 99%

Section: Range and Damage By Cluster Implantationmentioning

confidence: 99%