A memristive dual‐slope A/D converter

Yang, Le; Zeng, Zhigang; Ma, Zhansong; Shan, Wenqi

doi:10.1002/cta.2724

Cited by 5 publications

(5 citation statements)

References 30 publications

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“…These unique features have attracted much attention and pushed researchers to think about memristor as an alternative technology of non-volatile memory and computing systems. 14,15 Subsequently, memristors have been utilized in many applications such as oscillators, [16][17][18] analog to digital converters, 19 pattern recognition, 20 neural networks. 21,22 Numerous researchers have acknowledged that memristor-based resistive ternary CAM is an excellent associative memory based-architecture that meets technological challenges in terms of energy and scalability.…”

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confidence: 99%

Variability analysis of resistive ternary content addressable memories

Bahloul

Fouda

Barraj

et al. 2020

Circuit Theory & Apps

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Resistive ternary content addressable memories (Re-TCAMs) are considered a potential platform for in-memory associative processing. Re-TCAM permits the store and process of the data in the same physical area, allowing inmemory computing. Given the unique properties of the non-volatile memristive device, Re-TCAM is capable of low search energy, large-scale storage, and massively parallel processing. However, like any other semiconductor, memristor as a nanodevice suffers from fabrication process imperfections that provoke a significant variance in their high (R H) and low (R L) resistance states. These variations might lead to the malfunction of the Re-TCAM array and affect its performance and reliability. This paper proposes a simplified mathematical formulation of the memristor state variability for 2T2M bit-cell-based Re-TCAM array. We present a comprehensive statistical design, considering different circuit parameters and variance effects, such as tolerance of memristance variation, the memristor ratio (α = R H =R L), transistor technology, and memory width. The impact of these parameters on the performance is formulated as the probability of error is extensively studied, and a closed-form expression for the optimal threshold voltage is derived. The utility of the presented investigation is illustrated using a design example with real device parameters.

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confidence: 99%

Variability analysis of resistive ternary content addressable memories

Bahloul

Fouda

Barraj

et al. 2020

Circuit Theory & Apps

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“…33,34 The geometric optimizations, vertical excitation energies, uorescence emission energies, oscillator strengths, and the PESs of the rst electronically excited-state for C307 monomer and hydrogen-bonded complexes were investigated using TDDFT. 35,36 Frequency checks were performed for all optimized geometries. The Becke's threeparameter and Lee-Yang-Parr hybrid functional (B3LYP) and the TZVP basis sets were employed for all calculations unless otherwise noted.…”

Section: Methodsmentioning

confidence: 99%

The investigation of the ultrafast excited state deactivation mechanisms for coumarin 307 in different solvents

Zhang

et al. 2023

RSC Adv.

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“…Compared with the CMOS dual-slope A/D converter, the proposed memristor-based A/D converter in this paper has a more compact control circuit structure, and has the simpler control timing [31,32]. Compared with the memristor-based A/D converter in [17], the proposed A/D converter in this paper adopts the VTEAM model to construct the circuit.…”

Section: Circuit Implementation Of the Memristor-based A/d Convertermentioning

confidence: 99%

“…[9,10]. Owing to these merits, the memristor has been widely applied to the neuromorphic system [11,12], logic circuit [13][14][15], D/A and A/D converters [16,17], etc. [18,19].…”

Section: Introductionmentioning

confidence: 99%

A Memristor-Based High-Resolution A/D Converter

Yang

Ding

2022

Electronics

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Based on the voltage threshold adaptive memristor (VTEAM) model, this paper proposes a circuit design of a memristor-based A/D converter, which can achieve high-resolution conversion by simple configuration. For this A/D converter, there are the input voltage stage and the reference voltage stage in one conversion. According to the memristance change in the two stages, the input analog voltage is converted as the corresponding digital value. In the input voltage stage, the memristance increases from the initial memristance. Meanwhile, the counter rises its value from zero to the maximum. Next, the memristance returns to the initial memristance in the reference voltage stage. At the same time, the counting value starts to increase from zero again. Then, the input analog voltage is mapped to the eventual counting value of the reference voltage stage. The simulations of the memristor-based A/D converter demonstrate that it has good conversion performance. The proposed memristor-based A/D converter not only has more brilliant performance than the CMOS A/D converter, but also has the advantages over existing memristor-based A/D converters of anti-interference ability and high resolution.

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A memristive dual‐slope A/D converter

Cited by 5 publications

References 30 publications

Variability analysis of resistive ternary content addressable memories

Variability analysis of resistive ternary content addressable memories

The investigation of the ultrafast excited state deactivation mechanisms for coumarin 307 in different solvents

A Memristor-Based High-Resolution A/D Converter

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