1975
DOI: 10.1143/jjap.14.991
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A Method for Determining a GaAs Epitaxial Layer Impurity Profile

Abstract: From capacitance measurements of an electrolyte-GaAs contact, it is found that the Mott-Schottky relation holds for the contact as well as for a metal Schottky contact. On the basis of this result, a new method has been developed for determining the depth impurity profile of GaAs epitaxial layers. The method is suitable for both low- and high-resistivity substrates, with an accuracy compatible to the standard method. It is especially useful for studying anomalies which frequently appear at the epitaxial la… Show more

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Cited by 7 publications
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“…Unfortunately, the relative size of AE tends to increase as Ac is reduced, so that the reproducibility of "hi-lo" profiling must suffer. Electrolytic contact area definition has also been obtained by masking using evaporated wax films (10), or photoresist (17). However, for accurate measurements at low carrier concentration levels the mask would need to be quite thick (e.g., 100 ;~m) in comparison with the maximum depletion width (e.g., ~ 1 ~m for ND --/VA ~---10 t5 cm-3); otherwise an "excess" capacitance would be measured through the mask.…”
Section: Discussionmentioning
confidence: 99%
“…Unfortunately, the relative size of AE tends to increase as Ac is reduced, so that the reproducibility of "hi-lo" profiling must suffer. Electrolytic contact area definition has also been obtained by masking using evaporated wax films (10), or photoresist (17). However, for accurate measurements at low carrier concentration levels the mask would need to be quite thick (e.g., 100 ;~m) in comparison with the maximum depletion width (e.g., ~ 1 ~m for ND --/VA ~---10 t5 cm-3); otherwise an "excess" capacitance would be measured through the mask.…”
Section: Discussionmentioning
confidence: 99%