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High field current-voltage characteristics of n-type GaAs were investigated in the temperature range of 200∼300°K with long samples, and below room temperature remarkable current saturation is found before the current oscillation begins. The critical field for current saturation was nearly the same as that for the Gunn effect at room temperature. The field distribution was observed with a traveling probe, and the formation of stationary high field domain was detected in the current saturation region. A mechanism is proposed to explain the trapping of the high field domain which results in the current saturation and hysteresis effect observed in this experiment.

From capacitance measurements of an electrolyte-GaAs contact, it is found that the Mott-Schottky relation holds for the contact as well as for a metal Schottky contact. On the basis of this result, a new method has been developed for determining the depth impurity profile of GaAs epitaxial layers. The method is suitable for both low- and high-resistivity substrates, with an accuracy compatible to the standard method. It is especially useful for studying anomalies which frequently appear at the epitaxial layer-substrate interface.